55GN01CA-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA1111A 55GN01CA RF Transistor 55GN01CA Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =2V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =10mA 100 180 FE CE C f1V =3V, I =5mA 3.0 4.5 GHz T CE C Gain-Bandwidth Product f2V =5V, I =20mA 5.5 GHz T CE C Output Capacitance Cob 1.1 1.3 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.7 pF 2 Forward Transfer Gain S21e V =5V, I =20mA, f=1GHz 6.5 9.5 dB CE C Noise Figure NF V =3V, I =5mA, f=1GHz, Z =Z =50 1.9 dB CE C S L Ordering Information Device Package Shipping memo 55GN01CA-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V C CE C BE 50 80 V =5V CE 45 70 40 60 35 50 30 25 40 20 30 15 20 10 10 5 I =0mA B 0 0 0123456789 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- V IT06252 Base-to-Emitter Voltage, V -- V IT06253 CE BE h -- I f -- I FE C T C 3 10 V =5V V =5V CE CE 7 2 5 3 100 2 7 5 1.0 357 2 3 57 23 5 7 23 5 7 23 5 7 1.0 10 100 1.0 10 100 Collector Current, I -- mA IT06254 Collector Current, I -- mA IT07156 C C No. A1111-2/8 0.20mA 0.15mA 0.10mA 0.05mA 0.25mA 0.30mA DC Current Gain, h Collector Current, I -- mA FE C Gain-Bandwidth Product, f -- GHz Collector Current, I -- mA T C