APTGF30H60T1G Microchip

APTGF30H60T1G Full - Bridge V = 600V CES I = 30A Tc = 80C C NPT IGBT Power Module Application 3 4 Welding converters Switched Mode Power Supplies Q3 Q1 Uninterruptible Power Supplies CR1 CR3 Motor control 2 5 6 Features 1 Non Punch Through (NPT) Fast IGBT Q4 Q2 - Low voltage drop CR2 CR4 - Low tail current 7 9 - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current 8 10 - RBSOA and SCSOA rated Very low stray inductance 12 NTC 11 - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 42 C I Continuous Collector Current C T = 80C 30 A C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 140 W D C RBSOA Reverse Bias Safe Operating Area T = 125C 60A 500V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTGF30H60T1G Rev 1 October, 2012 APTGF30H60T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 250 V = 0V j GE I Zero Gate Voltage Collector Current A CES V = 600V CE T = 125C j 500 T = 25C 1.7 2.0 2.45 V =15V j GE V Collector Emitter on Voltage V CE(on) I = 30A C T = 125C j 2.2 V Gate Threshold Voltage V = V , I = 1mA 4 6 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 1350 V = 0V ies GE V = 25V pF C Output Capacitance 193 oes CE f = 1MHz C Reverse Transfer Capacitance 120 res Q Total gate Charge 99 g V = 15V GE V = 300V nC Q Gate Emitter Charge 10 ge Bus I =30A C Q Gate Collector Charge 60 gc Inductive Switching (25C) T Turn-on Delay Time 30 d(on) V = 15V GE T Rise Time 12 r ns V = 400V Bus T Turn-off Delay Time 80 d(off) I = 30A C T Fall Time 15 f R = 6.8 G Inductive Switching (125C) T Turn-on Delay Time 32 d(on) V = 15V GE T Rise Time 12 r ns V = 400V Bus T Turn-off Delay Time 90 d(off) I = 30A C T Fall Time 21 f R = 6.8 G V = 15V GE E Turn-on Switching Energy T = 125C 0.3 on j V = 400V Bus mJ I = 30A C E Turn-off Switching Energy T = 125C 0.8 off j R = 6.8 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 25 j I Maximum Reverse Leakage Current V =600V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 25 A F I = 25A 1.8 2.2 F I = 50A 2.2 V Diode Forward Voltage V F F T = 125C I = 25A j 1.6 F T = 25C 30 j t Reverse Recovery Time ns rr I = 25A F T = 125C 175 j V = 400V R T = 25C 55 di/dt =200A/s j Q Reverse Recovery Charge nC rr T = 125C 485 j 2 7 www.microsemi.com APTGF30H60T1G Rev 1 October, 2012