TO-220 APT10SCD65KCT 650V 10A (KCT) Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS 1 Higher Reliability Systems Anti-Parallel Diode Zero Recovery Time (t ) rr 3 -Switchmode Power Supply 2 -Inverters Popular TO-220 Package Minimizes or eliminates snubber 1 3 Power Factor Correction (PFC) Low Forward Voltage Low Leakage Current 2 1 - Anode 1 2 - Common Cathode Back of Case -Cathode 3 - Anode 2 MAXIMUM RATINGS All Ratings Per Leg: T = 25C unless otherwise specified. C Symbol Characteristic / Test Conditions Ratings Unit Maximum D.C. Reverse Voltage V R V Maximum Peak Repetitive Reverse Voltage 650 Volts RRM V Maximum Working Peak Reverse Voltage RWM T = 25C 17 C I Maximum D.C. Forward Current F T = 100C 9 C Amps I 50 Repetitive Peak Forward Surge Current (T = 45C, t = 10ms, Half Sine Wave) FRM J p I 110 Non-Repetitive Forward Surge Current (T = 25C, t = 10ms, Half Sine) FSM J p T = 25C 63 C P Power Dissipation W TOT T = 110C 20 C T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for 10 Seconds 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 10A T = 25C 1.5 1.8 F J V Forward Voltage Volts F I = 10A, T = 150C 2.0 F J V = 650V T = 25C 10 200 R J I Maximum Reverse Leakage Current A RM V = 650V, T = 150C 125 R J Q Total Capactive Charge V = 300V, I = 10A, di/dt = -500A/s, T = 25C 80 nC c R F J Junction Capacitance V = 1V, T = 25C, f = 1MHz 300 R J C Junction Capacitance V = 100V, T = 25C, f = 1MHz 72 pF T R J Junction Capacitance V = 300V, T = 25C, f = 1MHz 47 R J APT10SCD65KCT THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit Junction-to-Case Thermal Resistance 2.0 C/W R JC 0.07 oz W Package Weight T 1.9 g 6.4 lbin Torque Maximum Mounting Torque 0.7 Nm Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 2.5 2.0 D = 0.9 1.5 0.7 0.5 Note: 1.0 t 1 0.3 t 2 0.5 t 1 t Duty Factor D = / 2 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 20 18 T = -55C J 16 T = 25C J 14 15 T = 125C 12 J T = 150C J 10 10 8 6 5 4 2 0 0 0 1 2 3 4 25 50 75 100 125 150 Case Temperature (C) V , ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 3, Maximum Forward Current vs. Case Temperature FIGURE 2, Forward Current vs. Forward Voltage 050-7707 Rev B 9 - 2015 I , FORWARD CURRENT (A) F Z , THERMAL IMPEDANCE (C/W) JC I (peak) (A) F P DM