APT15DQ100BCTG Microchip

APT15DQ100BCTG electronic component of Microchip
APT15DQ100BCTG Microchip
APT15DQ100BCTG Rectifiers
APT15DQ100BCTG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of APT15DQ100BCTG Rectifiers across the USA, India, Europe, Australia, and various other global locations. APT15DQ100BCTG Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

Part No. APT15DQ100BCTG
Manufacturer: Microchip
Category: Rectifiers
Description: Rectifiers Fast Recovery Epitaxial Diode - DQ
Datasheet: APT15DQ100BCTG Datasheet (PDF)
Price (USD)
1: USD 3.1625 ea
Line Total: USD 3.16 
Availability : 757
  
Ship by Tue. 12 Aug to Thu. 14 Aug
QtyUnit Price
1$ 3.1625
100$ 2.541

Availability 757
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.1625
100$ 2.541

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Product
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APT15DQ100BCTG from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT15DQ100BCTG and other electronic components in the Rectifiers category and beyond.

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TO-247 New Diode Data Sheet By Darel Bidwell 1000V 2x15A APT15DQ100BCT APT15DQ100BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (BCT) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Ultrafast Recovery Times Low Losses Anti-Parallel Diode -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching 1 Free Wheeling Diode 2 3 Popular TO-247 Package Cooler Operation -Motor Controllers -Converters 1 3 Low Forward Voltage Higher Reliability Systems -Inverters Snubber Diode Low Leakage Current Increased System Power 2 Density PFC Avalanche Energy Rated 1 - Anode 1 2 - Common Cathode Back of Case -Cathode 3 - Anode 2 MAXIMUM RATINGS All Ratings Per Leg: T = 25C unless otherwise specied. C Symbol Characteristic / Test Conditions APT15DQ100BCT(G) UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1000 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward Current (T = 126C, Duty Cycle = 0.5) 15 F(AV) C I RMS Forward Current (Square wave, 50% duty) 29 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) 80 FSM J E Avalanche Energy (1A, 40mH) mJ 20 AVL T ,T -55 to 175 Operating and StorageTemperature Range J STG C T 300 Lead Temperature for 10 Sec. L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 15A 2.5 3.0 F V I = 30A Forward Voltage Volts 3.06 F F I = 15A, T = 125C 1.92 F J V = 1000V 100 R I Maximum Reverse Leakage Current A RM V = 1000V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 12 T R Microsemi Website - New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT15DQ100BCT(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 20 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 235 rr I = 15A, di /dt = -200A/s Q F F nC - 185 Reverse Recovery Charge rr V = 667V, T = 25C R C I - 3 - Amps Maximum Reverse Recovery Current RRM t - 300 ns Reverse Recovery Time rr I = 15A, di /dt = -200A/s Q F F - 810 nC rr Reverse Recovery Charge V = 667V, T = 125C R C I - 6 - Maximum Reverse Recovery Current Amps RRM t - 125 ns Reverse Recovery Time rr I = 15A, di /dt = -1000A/s F F Q - 1150 nC Reverse Recovery Charge rr V = 667V, T = 125C R C I - 19 Amps Maximum Reverse Recovery Current RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R 1.18 Junction-to-Case Thermal Resistance C/W JC 0.22 oz W Package Weight T 5.9 g 10 lbin Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the specications and information contained herein. 1.20 D = 0.9 1.00 0.7 0.80 0.5 0.60 Note: t 1 0.40 0.3 t 2 t 1 t 0.20 Duty Factor D = / 2 0.1 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T (C) T (C) J C Z are the external thermal EXT 0.676 0.504 impedances: Case to sink, Dissipated Power sink to ambient, etc. Set to (Watts) zero when modeling only the case to junction. 0.00147 0.0440 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-4227 Rev B 7-2006 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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