The Microchip APT200GT60JR is an Insulated Gate Bipolar Transistor (IGBT) Modules of medium frequency and single form factor. It is suitable for power supplies, motor drives, inverters and other applications. It features a forward peak voltage of 600V, a maximum gate-emitter voltage of 20V, a minimum gate-emitter voltage of 2V, an output current up to 200A, a maximum junction temperature of 150°C, a minimum operating temperature of -40°C and a maximum storage temperature of +125°C. The APT200GT60JR also includes IGBT technology features such as low gate drop intrinsic avalanche energy-limiting ruggedized design, plus fast switching capability with low di/dt and soft current turn-off. This module is designed and manufactured to meet the requirements of industrial, commercial and home applications.