APT2X31D60J Microchip

APT2X31D60J electronic component of Microchip
APT2X31D60J Microchip
APT2X31D60J Discrete Semiconductor Modules
APT2X31D60J  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of APT2X31D60J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X31D60J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. APT2X31D60J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Datasheet: APT2X31D60J Datasheet (PDF)
Price (USD)
1: USD 21.8845 ea
Line Total: USD 21.88 
Availability : 50
  
Ship by Tue. 11 Nov to Thu. 13 Nov
QtyUnit Price
1$ 21.8845
100$ 19.305

Availability 50
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 21.8845
100$ 19.305

   
Manufacturer
Product Category
Technology
Case
Semiconductor Structure
Mounting
Electrical Mounting
Type Of Module
Max. Off-State Voltage
Load Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APT2X31D60J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X31D60J and other electronic components in the Discrete Semiconductor Modules category and beyond.

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New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 1 4 1 4 1 4 Anti-Parallel Parallel APT2X30D60J APT2X31D60J APT2X31D60J 600V 30AUL Recognize ISOTOP APT2X30D60J 600V 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode -Motor Controllers Popular SOT-227 Package Cooler Operation -Converters Higher Reliability Systems Snubber Diode Low Forward Voltage Uninterruptible Power Supply (UPS) Increased System Power High Blocking Voltage Induction Heating Density High Speed Rectiers Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Characteristic / Test Conditions APT2X31 31D60J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage Volts 600 RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 112C, Duty Cycle = 0.5) I 30 C F(AV) I RMS Forward Current (Square wave, 50% duty) Amps 49 F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 320 J FSM T ,T Operating and StorageTemperature Range -55 to 175 J STG C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 30A 1.6 1.8 F I = 60A V Forward Voltage Volts 1.9 F F I = 30A, T = 125C 1.4 F J V = V Rated 250 R R I Maximum Reverse Leakage Current A RM V = V Rated, T = 125C 500 R R J C pF Junction Capacitance, V = 200V 44 T R APT Website - New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2X31 30D60J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 23 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 85 rr I = 30A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 130 rr V = 400V, T = 25C R C I Maximum Reverse Recovery Current - 4 - Amps RRM t Reverse Recovery Time - 160 ns rr I = 30A, di /dt = -200A/s Q F F - 700 nC Reverse Recovery Charge rr V = 400V, T = 125C R C I - 8 - Maximum Reverse Recovery Current Amps RRM t Reverse Recovery Time - 70 ns rr I = 30A, di /dt = -1000A/s F F Q Reverse Recovery Charge - 1300 nC rr V = 400V, T = 125C R C I - 30 Maximum Reverse Recovery Current Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R 1.2 Junction-to-Case Thermal Resistance JC C/W R Junction-to-Ambient Thermal Resistance 20 JA oz 1.03 W Package Weight T g 29.2 lbin 10 Torque Maximum Mounting Torque 1.1 Nm APT Reserves the right to change, without notice, the specications and information contained herein. 1.40 1.20 0.9 1.00 0.7 0.80 0.5 Note: 0.60 t 1 0.3 0.40 t 2 t 1 t 0.20 Duty Factor D = / 2 SINGLE PULSE 0.1 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (C) 0.320 C/W 0.00278 J/ C Power 0.515 C/W 0.0421 J/ C (watts) 0.375 C/W 0.242 J/ C Case temperature (C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-6003 Rev G 2-2005 Z , THERMAL IMPEDANCE (C/W) JC P DM

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