APT2X51DC120J Microchip

APT2X51DC120J electronic component of Microchip Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of APT2X51DC120J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X51DC120J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. APT2X51DC120J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Power Module - SiC
Datasheet: APT2X51DC120J Datasheet (PDF)
Price (USD)
1: USD 151.8899 ea
Line Total: USD 151.89 
Availability : 0
  
QtyUnit Price
1$ 151.8899
5$ 148.1463
10$ 148.1463
25$ 144.4158
50$ 142.4
100$ 133.9967

Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 151.8899
5$ 148.1463
10$ 148.1463
25$ 144.4158
50$ 142.4
100$ 133.9967

   
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We are delighted to provide the APT2X51DC120J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X51DC120J and other electronic components in the Discrete Semiconductor Modules category and beyond.

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APT2X51DC120J APT2X50DC120J ISOTOP SiC Diode V = 1200V RRM I = 50A T = 100C Power Module F C Application 23 Uninterruptible Power Supply (UPS) Induction heating 2 3 Welding equipment High speed rectifiers 1 4 Features Anti-Parallel Anti-Parallel 1 4 SiC Schottky Diode AAPT2X50DC12PT2X60DC120J0J - Zero reverse recovery Parallel Parallel - Zero forward recovery APT2X51DC120J APT2X61DC120J - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP Package (SOT-227) Very low stray inductance High level of integration 3 2 Benefits 4 Outstanding performance at high frequency operation 1 Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ISOTOP Absolute maximum ratings (per leg) Symbol Parameter Max ratings Unit V Maximum DC reverse Voltage R 1200 V V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Average Forward Current Duty cycle = 50% T = 100C 50 F(AV) C A T = 25C I Non-Repetitive Forward Surge Current 10 s C 650 FSM These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 4 www.microsemi.com APT2X51 50DC120J Rev 1 October, 2012 APT2X51DC120J APT2X50DC120J All ratings T = 25C unless otherwise specified j Electrical Characteristics (per leg) Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 1.6 1.8 j V Diode Forward Voltage I = 50A V F F T = 175C 2.3 3.0 j T = 25C 160 1000 j I Maximum Reverse Leakage Current V = 1200V A RM R T = 175C 280 5000 j I = 50A, V = 600V F R Q Total Capacitive Charge 200 nC C di/dt =2500A/s f = 1MHz, V = 200V 480 R C Total Capacitance pF f = 1MHz, V = 400V 345 R Thermal and package characteristics (per leg) Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal resistance 0.32 thJC C/W R Junction to Ambient (IGBT & Diode) 20 thJA V RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V ISOL T ,T Storage Temperature Range -55 175 J STG C T Max Lead Temp for Soldering:0.063 from case for 10 sec 300 L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g SOT-227 (ISOTOP ) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) W=4.1 (.161) 7.8 (.307) W=4.3 (.169) 8.2 (.322) Hex Nut M4 H=4.8 (.187) (4 places) H=4.9 (.193) (4 places) 25.2 (0.992) r = 4.0 (.157) 25.4 (1.000) 4.0 (.157) 0.75 (.030) 12.6 (.496) (2 places) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) 4 3 15.1 (.594) 30.1 (1.185) * Emitter terminals are shorted 30.3 (1.193) internally. Current handling capability is equal for either 38.0 (1.496) Emitter terminal. 38.2 (1.504) 2 1 Dimensions in Millimeters and (Inches) 2 4 www.microsemi.com APT2X51 50DC120J Rev 1 October, 2012

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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