TO-247 TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltag e Drop High Freq. Switching to 100KHz Low Tail Current Ultra Low Leakag e Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT30GT60BRDQ2(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 64 C1 C I Continuous Collector Current T = 110C 30 Amps C2 C 1 I Pulsed Collector Current 110 CM Switching Safe Operating Area T = 150C SSOA 110A 600V J P Total Power Dissipation Watts 250 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 250A) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 700A, T = 25C) GE(TH) 3 4 5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 30A, T = 25C) 1.6 2.0 2.5 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 30A, T = 125C) 2.8 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 50 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 1000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT30GT60BRDQ2(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1600 Input Capacitance Capacitance ies C pF 150 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 92 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge GEP 3 Q V = 15V Total Gate Charge 7.5 g GE V = 300V Q nC Gate-Emitter Charge 145 CE ge I = 30A Q C Gate-Collector Mille) Charge 10 gc T = 150C, R = 10, V = 60 J G GE Switching Safe Operating Area SSOA A 15V, L = 100H,V = 600V CE 110 t Inductive Switching (25C) Turn-on Delay Time d(on) V = 400V t Current Rise Time 12 CC r ns t V = 15V Turn-off Delay Time d(off) GE 20 I = 30A t C Current Fall Time 225 f R = 10 4 G E Turn-on Switching Energy 80 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 525 on2 6 E Turn-off Switching Energy 605 off t Inductive Switching (125C) Turn-on Delay Time d(on) 600 t V = 400V Current Rise Time r CC 12 ns V = 15V t Turn-off Delay Time GE 20 d(off) I = 30A t C Current Fall Time f 245 R = 10 4 4 G E Turn-on Switching Energy on1 100 T = +125C 55 J E J Turn-on Switching Energy (Diode) 570 on2 6 E Turn-off Switching Energy 965 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .50 JC C/W R Junction to Case (DIODE) .67 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reser ves the right to chang e , without notice , the specifications and information contained herein. 052-6282 Rev B 6-2008