PRELIMINARY APT40SM120J Package 1200V, 32A, 80m APT40SM120J Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage UL Recognize applications. file E145592 ISOTOP D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: Applications: SiC MOSFET Benefits: Low capacitances and low gate charge PV inverter, converter and industrial motor High efficiency to enable lighter/compact drives system Fast switching speed due to low internal gate resistance (ESR) Smart grid transmission & distribution Simple to drive and easy to parallel Stable operation at high junction Induction heating, and welding Improved thermal capabilities and lower temperature, Tj(max) = +175C switching losses H/EV powertrain and EV charger Fast and reliable body diode Eliminates the need of external Free Power supply and distribution Wheeling Diode Superior avalanche ruggedness Lower system cost of ownership MAXIMUM RATINGS Symbol Parameter Ratings Unit V Drain Source Voltage 1200 V DSS Continuous Drain Current T = 25C 32 C I D Continuous Drain Current T = 100C 22 A C 1 I Pulsed Drain Current 99 DM V Gate-Source Voltage -10 to +25 V GS Total Power Dissipation T = 25C 165 W C P D Linear Derating Factor 1.1 W/C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.91 C/W JC T Operating Junction Temperature -55 175 j C T Storage Junction Temperature Range -55 150 stg W Package Weight 1.03 oz T 5 10 inlbf Torque Mounting Torque (SOT-227 Package), 6-32 or M3 screw .56 1.13 Nm 050-7696 Rev B 12/2016 1 G S D S S OT -227PRELIMINARY APT40SM120J STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V Drain-Source Breakdown Voltage V = 0V, I = 1mA 1200 V (BR)DSS GS D 2 R Drain-Source On Resistance V = 20V, I = 20A 80 100 m DS(on) GS D V Gate-Source Threshold Voltage 1.7 3.0 V GS(th) V = V , I = 1mA GS DS D V /T Threshold Voltage Temperature Coefficient -4.8 mV/C GS(th) J T = 25C 100 V = 1200V J DS I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 500 GS J I Gate-Source Leakage Current V = +20V / -10V 100 nA GSS GS T = 25C unless otherwise specified J DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance 2085 iss V = 0V, V = 1000V GS DD C Reverse Transfer Capacitance 25 pF rss f = 1MHz C Output Capacitance 115 oss V = 0/20V Q Total Gate Charge 130 GS g V = 800V Q Gate-Source Charge 19 nC DD gs Q Gate-Drain Charge I = 20A 35 D gd t Turn-On Delay Time V = 800V 10 DD d(on) V = 0/20V t Current Rise Time GS 6 r ns I = 20A D t Turn-Off Delay Time 32 d(off) 3 R = 0.7 G t Current Fall Time 16 f L = 115 H 4 E Turn-On Switching Energy 225 on2 25C T = J c E Turn-Off Switching Energy 50 Freewheeling Diode = APT10SCE120B off t Turn-On Delay Time V = 800V 8 DD d(on) V = 0/20V t Current Rise Time GS 6 r ns I = 20A D t Turn-Off Delay Time 36 d(off) 3 R = 0.7 G t Current Fall Time 17 f L = 115 H 4 E Turn-On Switching Energy 225 on2 150C T = J c E Turn-Off Switching Energy 60 Freewheeling Diode = APT10SCE120B off ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short 1.2 SCWT Short Circuit Withstand Time V = 960V, V = 20V, 25C 5 S T = DS GS C E Avalanche Energy, Single Pulse V = 145V, V = 20V, I = 20A, 25C 2500 mJ T = AS DS GS D C Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit V Diode Forward Voltage I = 20A, V = 0V 3.8 V SD GS SD t Reverse Recovery Time 90 ns rr I = 20A, V = 800V SD DD Q Reverse Recovery Charge 265 nC rr dI/dt = -1000A/s I Reverse Recovery Current 7.8 A rrm T = 25C unless otherwise specified J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 R is total gate resistance including internal gate driver impedance. G 4 E includes energy of APT10SCD120B free wheeling diode. on2 050-7696 Rev B 12/2016 2