APT5010JVFR 500V 44A 0.100 FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.UL Recognize ISOTOP Fast Recovery Body Diode 100% Avalanche Tested D FREDFET Lower Leakage Popular SOT-227 Package G Faster Switching S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5010JVFR UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 44 D C Amps 1 I Pulsed Drain Current 176 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 450 Watts C P D Linear Derating Factor 3.6 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 44 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 44 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.100 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 250 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 1000 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5010JVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 7400 8900 iss V = 0V GS C Output Capacitance 1000 1400 pF V = 25V oss DS C f = 1 MHz Reverse Transfer Capacitance 380 570 rss 3 Q Total Gate Charge V = 10V 312 470 g GS V = 0.5 V Q nC Gate-Source Charge 50 75 gs DD DSS I = I Cont. 25C Q Gate-Drain Mille) Charge D D 127 190 gd t (on) Turn-on Delay Time 14 30 d V = 15V GS t V = 0.5 V Rise Time 16 32 r DD DSS ns I = I Cont. 25C t (off) Turn-off Delay Time 54 80 d D D R = 0.6 t G Fall Time 510 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) I 44 S Amps 1 I Pulsed Source Current (Body Diode) 176 SM 2 V Diode Forward Voltage (V = 0V, I = -I Cont. ) 1.3 Volts SD GS S D dv dv 5 Peak Diode Recovery / 5 V/ns / dt dt Reverse Recovery Time T = 25C 250 j ns t rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 500 j Reverse Recovery Charge T = 25C 1.6 j Q C rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 5.5 j Peak Recovery Current T = 25C 15 j I Amps RRM di (I = -I Cont. , / = 100A/s) S D dt T = 125C 27 j THERMAL/PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case 0.28 R JC C/W R Junction to Ambient 40 JA V RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts Isolation Maximum Torque for Device Mounting Screws and Electrical Terminations. Torque 13 lbin 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 2.58mH, R = 25, Peak I = 44A j G L 2 5 di Pulse Test: Pulse width < 380 S, Duty Cycle < 2% I -I Cont. , / = 100A/s, V V , T 150C, R = 2.0, S D DD DSS j G dt V = 200V R APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.01 0.02 t 1 0.005 0.01 t 2 SINGLE PULSE t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5597 Rev B Z , THERMAL IMPEDANCE (C/W) JC P DM