T O-247 TYPICAL PERFORMANCE CURVES APT50GT60BR SR(G) 600V APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT 3 D PA K (S) C The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast G switching speed. C E Low Forward Voltage Drop High Freq. Switching to 100KHz Low Tail Current Ultra L ow Leakage Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specifi ed. C Symbol Parameter UNIT APT50GT60BR SR(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE 7 I Continuous Collector Current T = 25C 110 C1 C I Continuous Collector Current T = 110C 52 Amps C2 C 1 I Pulsed Collector Current 150 CM Switching Safe Operating Area T = 150C SSOA 150A 600V J P Total Power Dissipation Watts 446 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 2mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) 3 4 5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) GE C j 1.7 2.0 2.5 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) GE C j 2.2 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 25 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I nA Gate-Emitter Leakage Current (V = 20V) GES 120 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT50GT60BR SR(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 2660 ies C pF Output Capacitance V = 0V, V = 25V 250 oes GE CE C f = 1 MHz Reverse Transfer Capacitance 153 res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 240 g GE V = 300V Q nC Gate-Emitter Charge CE 20 ge I = 50A Q C Gate-Collector Mille) Charge 110 gc T = 150C, R = 4.3, V = J G GE Switching Safe Operating Area SSOA 150 A 15V, L = 100H,V = 600V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 14 V = 400V t Current Rise Time 32 CC r ns t V = 15V Turn-off Delay Time d(off ) GE 240 I = 50A t C Current Fall Time 36 f R = 4.3 4 G E Turn-on Switching Energy 995 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 1110 on2 6 E Turn-off Switching Energy 1070 off t Inductive Switching (125C) Turn-on Delay Time 14 d(on) t V = 400V Current Rise Time 32 r CC ns V = 15V t Turn-off Delay Time GE d(off ) 270 I = 50A t C Current Fall Time 95 f R = 4.3 4 4 G E 1035 Turn-on Switching Energy on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 1655 on2 6 E Turn-off Switching Energy 1505 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .28 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the eff ect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 052-6273 Rev D 3-2012