APT50M65B2LL APT50M65LLL 500V 67A 0.065 R B2LL POWER MOS 7 MOSFET TM T-Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g LLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT50M65B2LL LLL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 67 D C Amps 1 I Pulsed Drain Current 268 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 694 C P D Linear Derating Factor W/C 5.5 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 67 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 33.5A) 0.065 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50M65 B2LL - LLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 7010 iss V = 0V GS C Output Capacitance V = 25V 1390 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 87 rss 3 Q Total Gate Charge V = 10V 141 g GS V = 250V Q DD Gate-Source Charge 40 gs nC I = 67A 25C D Q Gate-Drain Mille) Charge 70 gd RESISTIVE SWITCHING t Turn-on Delay Time 12 d(on) V = 15V GS t Rise Time 28 r V = 250V DD ns t I = 67A 25C 29 d(off) Turn-off Delay Time D R = 0.6 G t Fall Time 30 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 1035 on V = 333V, V = 15V DD GS I = 67A, R = 3 E Turn-off Switching Energy 845 D G off INDUCTIVE SWITCHING 125C J E 6 Turn-on Switching Energy 1556 on V = 333V, V = 15V DD GS E I = 67A, R = 3 Turn-off Switching Energy 1013 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 67 Continuous Source Current (Body Diode) S Amps I 1 268 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -67A) Volts SD GS S t 680 Reverse Recovery Time (I = -67A, dl /dt = 100A/s) ns rr S S Q Reverse Recovery Charge (I = -67A, dl /dt = 100A/s) 17.0 C rr S S dv dv 5 V/ns / 8 Peak Diode Recovery / dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.34mH, R = 25 , Peak I = 67A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -67A / 700A/s V 500V T 150C dt S R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.16 0.7 0.12 0.5 Note: 0.08 t 1 0.3 t 2 t 0.04 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7012 Rev D 12-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM