STPSC40065C-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data A1 Description K The SiC diode is a high voltage power Schottky A2 diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. A2 Used as a freewheeling or output rectification K A1 diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter. TO-247 Table 1: Device summary Symbol Value Features IF(AV) 2 x 20 A No reverse recovery charge in application V 650 V RRM current range Switching behavior independent of Tj (max.) 175 C temperature V (typ.) 1.30 V F Dedicated to PFC applications AEC-Q101 qualified PPAP capable ECOPACK2 compliant component May 2016 DocID029263 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics STPSC40065C-Y 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 650 V I Forward rms current 40 A F(RMS) (1) Tc = 140 C , DC, per diode 20 IF(AV) Average forward current A (1) Tc = 130 C , DC, per device 40 Repetitive peak forward I Tc =140 C, Tj = 175 C, = 0.1 87 A FRM current tp = 10 ms sinusoidal, Tc = 25 C 90 Surge non repetitive I tp = 10 ms sinusoidal, Tc = 125 C 70 A FSM forward current tp = 10 s square, Tc = 25 C 400 T Storage temperature range -55 to +175 C stg (2) Tj Operating junction temperature -40 to +175 C Notes: (1) Value based on Rth(j-c) max. (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Value Unit Per diode 0.90 Rth(j-c) Junction to case Total 0.60 C/W R Coupling 0.30 th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 30 300 j VR = VRRM (1) I R Reverse leakage current Tj = 150 C - 280 2000 A T = 25 C V = 600 V 15 150 j R Tj = 25 C - 1.30 1.45 (2) VF Forward voltage drop T = 150 C I = 20 A - 1.45 1.65 V j F Tj = 175 C - 1.50 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.02 x I + 0.039 x I F(AV) F (RMS) 2/9 DocID029263 Rev 2