APT80GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.UL Recognize Low Conduction Loss 100 kHz operation 400V, 39A ISOTOP C Low Gate Charge 50 kHz operation 400V, 59A G Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Parameter Symbol APT80GP60J UNIT V Collector-Emitter Voltage 600 CES Gate-Emitter Voltage V 20 Volts GE V Gate-Emitter Voltage Transient 30 GEM I 151 Continuous Collector Current T = 25C C1 C I = 110C 68 Amps Continuous Collector Current T C2 C 1 I 330 Pulsed Collector Current T = 25C CM C SSOA Switching Safe Operating Area T = 150C 330A 600V J P Total Power Dissipation 462 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 600 BV Collector-Emitter Breakdown Voltage (V = 0V, I = 1.0mA) CES GE C V Gate Threshold Voltage (V = V , I = 2.5mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 80A, T = 25C) GE C j 2.2 2.7 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 80A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 1.0 CE GE j mA I CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 5 CE GE j Gate-Emitter Leakage Current (V = 20V) nA I 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT80GP60J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 9840 Capacitance ies C Output Capacitance V = 0V, V = 25V 735 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 40 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 280 g V = 300V Q nC Gate-Emitter Charge CE 65 ge I = 80A C Q Gate-Collector Mille) Charge gc 85 SSOA Switching SOA T = 150C, R = 5, V = 330 A J G GE 15V, L = 100H,V = 600V CE t Turn-on Delay Time 29 Inductive Switching (25C) d(on) V = 400V CC t Current Rise Time 40 r ns V = 15V GE t Turn-off Delay Time 116 d(off) I = 80A C t 78 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 795 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 1536 J on2 6 E Turn-off Switching Energy 1199 off t Turn-on Delay Time Inductive Switching (125C) 29 d(on) V = 400V t CC Current Rise Time 40 r ns V = 15V GE t Turn-off Delay Time 149 d(off) I = 80A C t Current Fall Time 84 f R = 5 G 4 E Turn-on Switching Energy 795 on1 T = +125C J 5 Turn-on Switching Energy (Diode) E 2153 on2 J 6 E Turn-off Switching Energy 1690 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) .27 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight 29.2 gm T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7426 Rev B 11-2003