650V 94A APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET TM T-Max Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated dv D Extreme / Rated dt Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise specif ed. C Symbol Parameter APT94N65B2C3G UNIT Drain-Source Voltage 650 Volts V DSS 1 94 Continuous Drain Current T = 25C C I D 60 Amps Continuous Drain Current T = 100C C 2 282 I Pulsed Drain Current DM Gate-Source Voltage Continuous 20 Volts V GS 833 Watts P Total Power Dissipation T = 25C D C Operating and Storage Junction Temperature Range -55 to 150 T ,T J STG C Lead Temperature: 0.063 from Case for 10 Sec. 260 T L dv 50 V/ns / Drain-Source Voltage slope (V = 480V, I = 94A, T = 125C) dt DS D J 2 7 Amps I Avalanche Current AR 3 1 E Repetitive Avalanche Energy ( Id = 3.5A, Vdd = 50V ) AR mJ 1800 E Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 50V ) AS STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT Drain-Source Breakdown Voltage (V = 0V, I = 500A) BV 650 Volts GS D (DSS) 3 R Drain-Source On-State Resistance (V = 10V, I = 47A) 0.03 0.035Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 650V, V = 0V) 1.0 50 DS GS I A DSS Zero Gate Voltage Drain Current (V = 650V, V = 0V, T = 150C) 100 DS GS C Gate-Source Leakage Current (V = 20V, V = 0V) I 200 nA GS DS GSS Gate Threshold Voltage (V = V , I = 5.8mA) V 2.1 3 3.9 Volts DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by In neon Technologies AG.COOLMO is a trade- mark of In neon Technologies AG Microsemi Website - DYNAMIC CHARACTERISTICS APT94N65B2C3G Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance V = 0V 13940 iss GS C V = 25V pF Output Capacitance 5200 DS oss f = 1 MHz C Reverse Transfer Capacitance 229 rss Q 4 V = 10V 580 g Total Gate Charge GS Q V = 300V nC Gate-Source Charge DD 72 gs I = 94A 25C Q D gd Gate-Drain Mille) Charge 234 INDUCTIVE SWITCHING t Turn-on Delay Time 32 d(on) V = 15V GS t 59 r Rise Time ns V = 400V DD t d(off) Turn-off Delay Time 498 I = 94A 25C D t Fall Time 167 R = 4.3 f G E 5 INDUCTIVE SWITCHING 25C 2684 on Turn-on Switching Energy V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 94A, R = 4.3 4448 off D G J INDUCTIVE SWITCHING 125C 5 E Turn-on Switching Energy 3391 on V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 94A, R = 4.3 5082 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 94 S Amps 2 I Pulsed Source Current (Body Diode) 282 SM 4 V Diode Forward Voltage (V = 0V, I = -94A) 0.9 1.2 Volts SD GS S T 960 Reverse Recovery Time = 25C j t ns di rr (I = -94A, / = 100A/s) 1271 S dt T 31 Reverse Recovery Charge = 25C j Q C di rr (I = -94A, / = 100A/s) 43 S dt T 58 Peak Recovery Current = 25C j I Amps di RRM (I = -94A, / = 100A/s) 56 S dt THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.15 JC C/W R Junction to Ambient 31 JA 4 See MIL-STD-750 Method 3471 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 5 Eon includes diode reverse recovery. 2 Repetitive avalanche causes additional power losses that can be calcula- 6 Maximum 125C diode commutation speed = di/dt 600A/s ted as P = E *f . Pulse width tp limited by Tj max. AV AR 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.16 D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: 0.06 t 1 0.3 t 0.04 2 t 1 t Duty Factor D = / 2 0.1 0.02 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -2 -5 -4 -3 10 10 10 10 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 050-8069 Rev D 9-2017 Z , THERMAL IMPEDANCE (C/W) JC P DM