Product Information

DMTH4004LK3-13

DMTH4004LK3-13 electronic component of Diodes Incorporated

Datasheet
MOSFET 40V N-Ch Enh FET 3mOhm 10Vgs 100A

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.449 ea
Line Total: USD 1.45

2413 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1357 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

DMTH4004LK3-13
Diodes Incorporated

1 : USD 1.2763
10 : USD 1.0374
30 : USD 0.863
100 : USD 0.8065
500 : USD 0.7813
1000 : USD 0.7692

2413 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

DMTH4004LK3-13
Diodes Incorporated

1 : USD 1.449
10 : USD 1.1845
100 : USD 0.9223
500 : USD 0.782
1000 : USD 0.6371
2500 : USD 0.5991
5000 : USD 0.5704
10000 : USD 0.5439
25000 : USD 0.5428

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
Category
Brand Category
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
1N4755A electronic component of Diodes Incorporated 1N4755A

Diode Zener Single 43V 5% 1W 2-Pin DO-41
Stock : 1

1N5222B electronic component of Diodes Incorporated 1N5222B

Diode Zener Single 2.5V 5% 500mW 2-Pin DO-35
Stock : 1

1N5262B electronic component of Diodes Incorporated 1N5262B

Diode Zener Single 51V 5% 500mW 2-Pin DO-35
Stock : 1

1N972B electronic component of Diodes Incorporated 1N972B

1N972B diodes zetex
Stock : 1

2W02 electronic component of Diodes Incorporated 2W02

Diode Rectifier Bridge Single 200V 2A 4-Pin Case WOG
Stock : 1

1N4947 electronic component of Diodes Incorporated 1N4947

1N4947 diodes zetex
Stock : 1

1N5350B electronic component of Diodes Incorporated 1N5350B

Diode Zener Single 13V 5% 5W 2-Pin Case 5W
Stock : 1

1N969B electronic component of Diodes Incorporated 1N969B

Diode Zener Single 22V 5% 500mW 2-Pin DO-35 Box
Stock : 1

1N4745A-T electronic component of Diodes Incorporated 1N4745A-T

Diode Zener Single 16V 5% 1W 2-Pin DO-41 T/R
Stock : 1

1.5KE6V8CA-T electronic component of Diodes Incorporated 1.5KE6V8CA-T

TVS Diodes - Transient Voltage Suppressors 1500W 5.8V
Stock : 1

Image Description
NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 9000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 31583

RU30C8H electronic component of Ruichips RU30C8H

MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

SVT13N06SA electronic component of Silan SVT13N06SA

MOSFET N Trench 60V 13A (Tc) 2.5V @ 250uA 11 mΩ @ 13A,10V SOP-8 RoHS
Stock : 0

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 0

SI1563EDH electronic component of VBsemi Elec SI1563EDH

20V 3.28A 90mO@4.5V,3.28A 1PCSN-Channel&1PCSP-Channel SC-70-6 MOSFETs ROHS
Stock : 1

DMTH4004LK3 Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Rated to 175C Ideal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m V = 10V 100A GS Robust End Application 40V 5m V = 4.5V 100A GS Low Rdson Minimizes Power Losses Low Qg Minimizes Switching Losses Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (RDS(ON)) and yet maintain superior switching performance, making An Automotive-Compliant Part is Available Under Separate it ideal for high efficiency power management applications. Datasheet (DMTH4004LK3Q) Applications Mechanical Data Engine Management Systems Case: TO252 Body Control Electronics Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) TO252 (DPAK) Equivalent Circuit Top View Pin Out Top View Ordering Information (Notes 4) Part Number Case Packaging DMTH4004LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4004LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 40 V V DSS Gate-Source Voltage 20 V V GSS T = +25C C 100 Continuous Drain Current (Note 6), V = 10V (Note 9) I A GS D T = +100C 100 C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 100 A I S Avalanche Current, L = 0.2mH 30 A I AS Avalanche Energy, L = 0.2mH 90 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 3.9 W A D Thermal Resistance, Junction to Ambient (Note 5) 38 C/W R JA Total Power Dissipation (Note 6) T = +25C P 180 W C D Thermal Resistance, Junction to Case (Note 6) 0.8 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current, T = +25C I 1 A V = 32V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 2.4 3 m V = 10V, I = 50A GS D Static Drain-Source On-Resistance R DS(ON) 4 5 m V = 4.5V, I = 50A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 50A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance pF C 4,450 iss V = 25V, V = 0V, DS GS Output Capacitance pF C 1,407 oss f = 1MHz Reverse Transfer Capacitance pF C 74 rss Gate Resistance R 0.7 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 35 nC GS g Total Gate Charge (V = 10V) Q 83 nC GS g V = 20V, I = 30A DS D Gate-Source Charge Q 10 nC gs Gate-Drain Charge Q nC gd 11.2 Turn-On Delay Time ns t 5.9 D(ON) Turn-On Rise Time ns t 13.2 V = 10V, V = 20V, r GS DS Turn-Off Delay Time ns R = 1.6, I = 30A t 25.8 g D D(OFF) Turn-Off Fall Time ns t 7.9 F Body Diode Reverse Recovery Time t ns I = 50A, di/dt = 100A/s RR 48 F Body Diode Reverse Recovery Charge Q nC I = 50A, di/dt = 100A/s RR 72 F Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to solder point (on the exposed drain pin). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package Limited. 2 of 7 DMTH4004LK3 December 2015 Diodes Incorporated www.diodes.com Document number: DS37792 Rev. 2 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted