Product Information

RRL025P03FRATR

RRL025P03FRATR electronic component of ROHM

Datasheet
MOSFET Pch -30V Vds -2.5A 0.095Rds(on) 5.2Qg
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4566 ea
Line Total: USD 0.46

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1
5 : USD 0.6277
10 : USD 0.5192
100 : USD 0.3898
500 : USD 0.3063
1000 : USD 0.2015

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.4566
10 : USD 0.3922
100 : USD 0.2979
500 : USD 0.2369
1000 : USD 0.192
3000 : USD 0.161
9000 : USD 0.161
24000 : USD 0.1576
45000 : USD 0.1552

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

RRL025P03 FRA Pch -30V -2.5A Power MOSFET Datasheet Outline (6) V 30V DSS (5) TUMT6 (4) R (Max.) 75m DS(on) I (1) 2.5A D (2) (3) P 1.0W D Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TUMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE 5) AEC-Q101 Qualified Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UA Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage V 30 DSS *1 Continuous drain current I 2.5 A D *2 Pulsed drain current A I 10 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.0 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.B 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.B 1/11Data Sheet RRL025P03FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 C/W thJA Thermal resistance, junction - ambient *4 R - - 391 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 25 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = 10V, I = 2.5A - 55 75 GS D V = 4.5V, I = 1.2A - 85 115 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 1.2A - 95 125 GS D V = 10V, I = 2.5A, T =125C - 95 135 GS D j R Gate input resistannce f = 1MHz, open drain - 24 - G *5 Transconductance V = 10V, I = 2.5A 2.0 4.4 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2016.06 - Rev.B 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.B 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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