Product Information

APTM60H23FT1G

APTM60H23FT1G electronic component of Microchip

Datasheet
Discrete Semiconductor Modules Power Module - Mosfet
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 74.5779 ea
Line Total: USD 74.58

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 15
Multiples : 15

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APTM60H23FT1G
Microchip

15 : USD 78.1553

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

APTM60H23FT1G
Microchip

1 : USD 74.5779
10 : USD 70.1628

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Additional Infomation About Product

APTM60H23FT1G V = 600V DSS Full - Bridge R = 190m typ Tj = 25C DSon MOSFET Power Module I = 20A Tc = 25C D 3 4 Application Welding converters Q1 Switched Mode Power Supplies Q3 Uninterruptible Power Supplies Motor control 5 2 6 1 Features Q2 Q4 Power MOS 8 FREDFETs - Low R DSon - Low input and Miller capacitance 79 - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated 810 - Very rugged Very low stray inductance NTC 11 12 - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 600 V DSS T = 25C 20 c I Continuous Drain Current D A T = 80C 15 c I Pulsed Drain current 125 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 230 DSon m P Maximum Power Dissipation T = 25C 208 W D c I Avalanche current (repetitive and non repetitive) 17 A AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTM60H23FT1G Rev1 October, 2012 APTM60H23FT1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 250 V = 600V j DS I Zero Gate Voltage Drain Current A DSS V = 0V GS T = 125C 1000 j R Drain Source on Resistance V = 10V, I = 17A 190 230 m DS(on) GS D V Gate Threshold Voltage V = V , I = 1mA 3 4 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V 100 nA GSS GS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 5316 V = 0V iss GS V = 25V pF C Output Capacitance 610 DS oss f = 1MHz C Reverse Transfer Capacitance 56 rss Q Total gate Charge 165 g V = 10V GS Q Gate Source Charge V = 300V 36 nC gs Bus I = 17A D Q Gate Drain Charge 70 gd T Turn-on Delay Time Resistive switching 25C 37 d(on) V = 15V GS T Rise Time 43 r V = 400V ns Bus T Turn-off Delay Time 115 d(off) I = 17A D R = 4.7 T Fall Time G 34 f Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Continuous Source current Tc = 25C 20 S A (Body diode) Tc = 80C 15 V Diode Forward Voltage V = 0V, I = - 17A 1 V SD GS S dv/dt Peak Diode Recovery 30 V/ns T = 25C 200 j t Reverse Recovery Time ns rr I = - 17A S T = 125C 370 j V = 100V R T = 25C 0.76 di /dt = 100A/s j S Q Reverse Recovery Charge C rr T = 125C 1.91 j dv/dt numbers reflect the limitations of the circuit rather than the device itself. I - 17A di/dt 1000A/s V 400V T 125C S DD j 2 6 www.microsemi.com APTM60H23FT1G Rev1 October, 2012

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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