Product Information

APTMC120HM17CT3AG

APTMC120HM17CT3AG electronic component of Microchip

Datasheet
Discrete Semiconductor Modules CC3186
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1187.0048 ea
Line Total: USD 1187

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 1126.7125

Read More Specifications

     
Manufacturer
Product Category
Product
Type
Vf - Forward Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Technology
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Additional Infomation About Product

APTMC120HM17CT3AG V = 1200V DSS Full bridge R = 17m max Tj = 25C DSon SiC MOSFET Power Module I = 147A Tc = 25C D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET - Low R DS(on) - High temperature performance SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS compliant All multiple inputs & outputs must be shorted together Example: 13/14 29/30 22/23 All ratings T = 25C unless otherwise specified j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-8 www.microsemi.com APTMC120HM17CT3AG Rev 1 May, 2016 APTMC120HM17CT3AG Absolute maximum ratings (per SiC MOSFET) Symbol Parameter Max ratings Unit V Drain - Source Voltage 1200 V DSS T = 25C 147 c I Continuous Drain Current D T = 80C 116 A c I Pulsed Drain current 300 DM V Gate - Source Voltage -10/25V V GS R Drain - Source ON Resistance 17 m DSon P Maximum Power Dissipation T = 25C 750 W D c Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V , V = 1200V 20 200 A DSS GS DS T = 25C 12.5 17 V = 20V j GS R Drain Source on Resistance m DS(on) I = 100A T = 175C 26 D j V Gate Threshold Voltage V = V , I = 30mA 2 2.6 4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 1.2 A GSS GS DS Dynamic Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 5576 iss V = 0V GS C Output Capacitance V = 1000V 440 pF oss DS f = 1MHz C Reverse Transfer Capacitance 30 rss Q Total gate Charge 332 g V = -5/+20V GS Q Gate Source Charge V = 800V 92 nC gs Bus I =100A D Q Gate Drain Charge 100 gd T Turn-on Delay Time 21 d(on) V = -2/+20V GS T Rise Time 19 r V = 800V Bus ns I = 100A T Turn-off Delay Time D 50 d(off) R = 8 R = 10 L G T Fall Time 30 f Inductive Switching E Turn on Energy T = 150C 2.2 on V = -5/+20V j GS V = 600V mJ Bus I = 100A D E Turn off Energy T = 150C 1.2 off j R = 10 G R Internal gate resistance 3.05 Gint R Junction to Case Thermal Resistance 0.2 C/W thJC Body diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit V = -5V T = 25C 4 GS j V Diode Forward Voltage V SD I = 50A T = 175C 3.5 SD j t Reverse Recovery Time 45 ns rr I = 100A V = -5V SD GS Q Reverse Recovery Charge 812 nC rr V = 800V di /dt = 2000A/s R F I Reverse Recovery Current 27 A rr 2-8 www.microsemi.com APTMC120HM17CT3AG Rev 1 May, 2016

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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