Product Information

DN2530N3-G

DN2530N3-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 0.7888 ea
Line Total: USD 19.72

4850 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
4850 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 25
Multiples : 25

Stock Image

DN2530N3-G
Microchip

25 : USD 0.7888
250 : USD 0.7262
500 : USD 0.715
1000 : USD 0.705
3000 : USD 0.6737
5000 : USD 0.6638
8000 : USD 0.6538
15000 : USD 0.6438

727 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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DN2530N3-G
Microchip

1 : USD 0.9504
25 : USD 0.9504

803 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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DN2530N3-G
Microchip

1 : USD 0.9174
25 : USD 0.9174

28 - WHS 4


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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DN2530N3-G
Microchip

1 : USD 1.271
10 : USD 1.2428
30 : USD 1.2247
100 : USD 1.1079

1506 - WHS 5


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

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DN2530N3-G
Microchip

1 : USD 0.8341
25 : USD 0.7179
100 : USD 0.6633

643 - WHS 6


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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DN2530N3-G
Microchip

1 : USD 0.988
3 : USD 0.949
10 : USD 0.897
20 : USD 0.858
53 : USD 0.806

727 - WHS 7


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 10
Multiples : 1

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DN2530N3-G
Microchip

10 : USD 0.7921

4850 - WHS 8


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 100
Multiples : 25

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DN2530N3-G
Microchip

100 : USD 0.9623
250 : USD 0.903
500 : USD 0.8849

803 - WHS 9


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 9
Multiples : 1

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DN2530N3-G
Microchip

9 : USD 0.8892

643 - WHS 10


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 79
Multiples : 1

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DN2530N3-G
Microchip

79 : USD 1.1818
100 : USD 1.1582

3862 - WHS 11


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 48
Multiples : 1

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DN2530N3-G
Microchip

48 : USD 0.7969
50 : USD 0.7852

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode (normally-on) High input impedance transistor utilizing an advanced vertical DMOS structure and Low input capacitance Supertexs well-proven silicon-gate manufacturing process. Fast switching speeds This combination produces a device with the power handling Low on-resistance capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefcient inherent Low input and output leakage in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Normally-on switches wide range of switching and amplifying applications where Solid state relays high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Linear ampliers Constant current sources Power supply circuits Telecom Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA(SOT-89) TO-92 () (mA) DN2530 DN2530N8-G DN2530N3-G 300 12 200 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN SOURCE SOURCE DRAIN DRAIN Absolute Maximum Ratings GATE GATE Parameter Value TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX Product Marking Gate-to-source voltage 20V D N YY = Year Sealed Operating and storage O O -55 C to +150 C 2 5 3 0 WW = Week Sealed temperature = Green Packaging Y Y W W O Soldering temperature* 300 C TO-92 (N3) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 5 T W voltages are referenced to device ground. = Green Packaging TO-243AA (SOT-89) (N8) * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN2530 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM Package O (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-243AA 200 500 1.6 15 78 200 500 TO-92 175 500 0.74 125 170 175 500 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 300 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.0 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS Static drain-to-source on-state R - - 12 V = 0V, I = 150mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transconductance 300 - - mmho V = 10V, I = 150mA FS DS D C Input capacitance - - 300 ISS V = -10V, GS C Common source output capacitance - - 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - - 5 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 r ns I = 150mA, D t Turn-off delay time - - 15 d(OFF) R = 25, GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -10V, I = 150mA SD GS SD t Reverse recovery time - 600 - ns V = -10V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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