DN2540N3-G Microchip

DN2540N3-G electronic component of Microchip
DN2540N3-G Microchip
DN2540N3-G MOSFETs
DN2540N3-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DN2540N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN2540N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DN2540N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 400V; 0.15A; 1W; TO92
Datasheet: DN2540N3-G Datasheet (PDF)
Price (USD)
1: USD 1.0787 ea
Line Total: USD 1.08 
Availability : 1277
  
Ship by Wed. 20 Aug to Fri. 22 Aug
QtyUnit Price
1$ 1.0787
25$ 0.8928
100$ 0.7579

Availability 1940
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 59
Multiples : 25
QtyUnit Price
59$ 1.19
250$ 0.905
500$ 0.895
1000$ 0.89
3000$ 0.8862
5000$ 0.8812


Availability 1277
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0787
25$ 0.8928
100$ 0.7579


Availability 617
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.512
3$ 1.456
10$ 1.204
42$ 1.19
100$ 1.148


Availability 617
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 152
Multiples : 1
QtyUnit Price
152$ 1.7194


Availability 33
Ship by Fri. 29 Aug to Wed. 03 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.0996
10$ 1.9575
30$ 1.5558
100$ 1.3428
500$ 1.2474
1000$ 1.2069


Availability 1940
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 200
Multiples : 25
QtyUnit Price
200$ 1.3923
250$ 1.2849
500$ 1.218
1000$ 1.176
3000$ 1.1235

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
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Transistor Type
Type
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Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN2540N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN2540N3-G and other electronic components in the MOSFETs category and beyond.

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DN2540 Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Applications thermally-induced secondary breakdown. Normally-on switches Supertexs vertical DMOS FETs are ideally suited to a Solid state relays wide range of switching and amplifying applications where Converters high breakdown voltage, high input impedance, low input Linear amplifiers capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Product Summary Ordering Information R I DS(ON) DSS BV /BV DSX DGX Part Number Package Option Packing (max) (min) DN2540N3-G TO-92 1000/Bag 400V 25 150mA DN2540N3-G P002 DN2540N3-G P003 Pin Configuration DN2540N3-G P005 TO-92 2000/Reel DRAIN DN2540N3-G P013 DN2540N3-G P014 DRAIN DN2540N5-G TO-220 50/Tube SOURCE SOURCE DN2540N8-G TO-243AA (SOT-89) 2000/Reel GATE -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. GATE DRAIN Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. TO-92 TO-220 Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV SOURCE DSX DRAIN Drain-to-gate voltage BV GATE DGX TO-243AA (SOT-89) Gate-to-source voltage 20V Operating and storage O O -55 C to +150 C Typical Thermal Resistance temperature Package ja Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous O TO-92 132 C/W operation of the device at the absolute rating level may affect device reliability. All O voltages are referenced to device ground. TO-220 29 C/W O TO-243AA (SOT-89) 133 C/W Doc. DSFP-DN2540 Supertex inc. B060313 www.supertex.comDN2540 Product Marking L = Lot Number SiDN YY = Year Sealed YY = Year Sealed 2540 DN2540N5 WW = Week Sealed WW = Week Sealed LLLLLLLLL YYWW YYWW = Green Packaging = Green Packaging Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or TO-220 TO-92 W = Code for week sealed DN5DW = Green Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C C TO-92 120mA 500mA 1.0W 120mA 500mA TO-220 500mA 500mA 15W 500mA 500mA TO-243AA 170mA 500mA 1.6W 170mA 500mA Notes: I (continuous) is limited by max rated T. D j O Mounted on FR5 board, 25mm x 25mm x 1.57mm, T = 25 C. A O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 400 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current D(OFF) V = 0.8 Max Rating, DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 150 - - mA V = 0V, V = 25V DSS GS DS Static drain-to-source on-state R - 17 25 V = 0V, I = 120mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 120mA DS(ON) DS(ON) GS D G Forward transconductance - 325 - mmho V = 10V, I = 100mA FS DS D C Input capacitance - 200 300 ISS V = -10V, GS C Common source output capacitance - 12 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - 1.0 5.0 RSS Doc. DSFP-DN2540 Supertex inc. B060313 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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