NVD5117PL MOSFET Power, Single, P-Channel -60 V, 16 m , -61 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) High Current Capability V R I (BR)DSS DS(on) D Avalanche Energy Specified 16 m 10 V AECQ101 Qualified 60 V 61 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 22 m 4.5 V Compliant S MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Parameter Symbol Value Unit PChannel DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS D Continuous Drain Cur- T = 25C I 61 A C D rent R (Note 1) JC 4 T = 100C 43 C Steady State Power Dissipation R T = 25C P 118 W JC C D (Note 1) 2 1 T = 100C 59 C 3 DPAK Continuous Drain Cur- T = 25C I 11 A A D rent R (Notes 1 & 2) CASE 369C JA T = 100C 8 A Steady STYLE 2 State Power Dissipation R T = 25C P 4.1 W JA A D MARKING DIAGRAMS (Notes 1 & 2) T = 100C 2.1 & PIN ASSIGNMENT A 4 Pulsed Drain Current T = 25C, t = 10 s I 419 A A p DM Drain Current Limited by T = 25C I 60 A A Dmaxpkg Package (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg 175 Source Current (Body Diode) I 118 A 2 S Drain 1 3 Single Pulse DraintoSource Avalanche E 240 mJ AS Gate Source Energy (T = 25C, V = 50 V, V = 10 V, J DD GS A = Assembly Location* I = 40 A, L = 0.3 mH, R = 25 ) L(pk) G Y = Year WW = Work Week Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 5117L = Device Code G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be * The Assembly Location Code (A) is front side assumed, damage may occur and reliability may be affected. optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter THERMAL RESISTANCE MAXIMUM RATINGS pin), the front side assembly code may be blank. Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State (Drain) R 1.3 C/W JC Device Package Shipping JunctiontoAmbient Steady State (Note 2) R 37 JA NVD5117PLT4G DPAK 2500 / T2500 / Tape &ape & 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions (PbFree) ReelReel noted. 2 DPAK 2500 / Tape & 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. NVD5117PLT4G 3. Maximum current for pulses as long as 1 second is higher but is dependent VF01 (PbFree) Reel on pulse duration and duty cycle. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 2 NVD5117PL/D AYWW 51 17LGNVD5117PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 29 A 12 16 m DS(on) GS D V = 4.5 V, I = 29 A 16 22 GS D Froward Transconductance g V = 15 V, I = 15 A 30 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 4800 pF iss GS V = 25 V DS Output Capacitance C 480 oss Reverse Transfer Capacitance C 320 rss Total Gate Charge Q V = 4.5 V 49 nC G(TOT) GS V = 48 V, DS I = 29 A D V = 10 V 85 GS Threshold Gate Charge Q 3 G(TH) GatetoSource Charge Q 13 GS V = 4.5 V, V = 48 V, GS DS I = 29 A D GatetoDrain Charge Q 28 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS (Notes 4) TurnOn Delay Time t 22 ns d(on) Rise Time t 195 r V = 4.5 V, V = 48 V, GS DS I = 29 A, R = 2.5 D G TurnOff Delay Time t 50 d(off) Fall Time t 132 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.86 1.0 V SD GS J I = 29 A S T = 125C 0.74 J Reverse Recovery Time t 36 ns RR Charge Time t 19 a V = 0 V, dl /dt = 100 A/ s, GS s I = 29 A s Discharge Time t 17 b Reverse Recovery Charge Q 44 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2