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JANTX1N968BUR-1

JANTX1N968BUR-1 electronic component of Microchip
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Part No.JANTX1N968BUR-1
Manufacturer: Microchip
Category:Zener Diodes
Description: Diode Zener Single 20V 5% 500mW 2-Pin DO-213AA
Datasheet: JANTX1N968BUR-1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 5.1861 ea
Line Total: USD 10.37

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2
Multiples : 1
2 : USD 5.1861
10 : USD 4.7079
25 : USD 4.4349
100 : USD 4.0203
250 : USD 3.9399

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 186
Multiples : 1
186 : USD 6.3561

0 - WHS 3


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 5.5241

0 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2
Multiples : 1
2 : USD 4.5374

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Manufacturer
Product Category
Voltage Tolerance
Configuration
Packaging
Package Type
Mounting
Rev Curr
Type
Zener Voltage
Operating Temperature Classification
Zener Test Current
Rad Hardened
Power Dissipation
Pin Count
Knee Impedance
Operating Temp Range
Brand
Cnhts
Hts Code
Mxhts
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1N962BUR-1 thru 1N986BUR-1 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV and PER MIL-PRF-19500/117 CDLL957B thru CDLL986B ZENER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C DC Power Dissipation: 500mW T = +125C EC Power Derating: 10 mW / C above T = +125C EC Forward Voltage 200mA: 1.1 volts maximum ELECTRICAL CHARACTERISTICS 25C CDI NOMINAL ZENER MAX. DC TYPE ZENER TEST MAXIMUM ZENERIMPEDANCE ZENER MAX. REVERSE NUMBER VOLTAGE CURRENT (NOTE 3) CURRENT LEAKAGE CURRENT V l l l V Z ZT ZM R R MILLIMETERS INCHES (NOTE 1) (NOTE 2) Z l Z l ZT ZT ZK ZK DIM MIN MAX MIN MAX VOLTS mA OHMS OHMS mA mA A VOLTS D 1.60 1.70 0.063 0.067 CDLL957B 6.8 18.5 4.5 700 1.0 55 5.0 5.2 F 0.41 0.55 0.016 0.022 CDLL958B 7.5 16.5 5.5 700 .5 50 5.0 5.7 G 3.30 3.70 .130 .146 CDLL959B 8.2 15.0 6.5 700 .5 45 5.0 6.2 CDLL960B 9.1 14.0 7.5 700 .5 41 5.0 6.9 G1 2.54 REF100 REF. CDLL961B 10 12.5 8.5 700 .25 38 2.0 7.6 S 0.03 MIN001 MIN. CDLL962B 11 11.5 9.5 700 .25 32 1.0 8.4 CDLL963B 12 10.5 11.5 700 .25 31 1.0 9.1 CDLL964B 13 9.5 13 700 .25 28 0.5 9.9 FIGURE 1 CDLL965B 15 8.5 16 700 .25 25 0.5 11 CDLL966B 16 7.8 17 700 .25 24 0.5 12 CDLL967B 18 7.0 21 750 .25 20 0.5 14 DESIGN DATA CDLL968B 20 6.2 25 750 .25 18 0.5 15 CDLL969B 22 5.6 29 750 .25 16 0.5 17 CDLL970B 24 5.2 33 750 .25 15 0.5 18 CASE: DO-213AA, Hermetically sealed CDLL971B 27 4.6 41 750 .25 13 0.5 21 glass case. (MELF, SOD-80, LL34) CDLL972B 30 4.2 49 1000 .25 12 0.5 23 CDLL973B 33 3.8 58 1000 .25 11 0.5 25 CDLL974B 36 3.4 70 1000 .25 10 0.5 27 LEAD FINISH: Tin / Lead CDLL975B 39 3.2 90 1000 .25 9.5 0.5 30 CDLL976B 43 3.0 93 1500 .25 8.8 0.5 33 THERMAL RESISTANCE: (R ): OJEC CDLL977B 47 2.7 105 1500 .25 7.9 0.5 36 100 C/W maximum at L = 0 inch CDLL978B 51 2.5 125 1500 .25 7.4 0.5 39 CDLL979B 56 2.2 150 2000 .25 6.8 0.5 43 CDLL980B 62 2.0 185 2000 .25 6.0 0.5 47 THERMAL IMPEDANCE: (Z ): 35 JX CDLL981B 68 1.8 230 2000 .25 5.5 0.5 52 C/W maximum CDLL982B 75 1.7 270 2000 .25 5.0 0.5 56 CDLL983B 82 1.5 330 3000 .25 4.6 0.5 62 CDLL984B 91 1.4 400 3000 .25 4.1 0.5 69 POLARITY: Diode to be operated with CDLL985B 100 1.3 500 3000 .25 3.7 0.5 76 the banded (cathode) end positive. CDLL986B 110 1.1 750 4000 .25 3.3 0.5 84 MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion NOTE 1 Zener voltage tolerance on suffix is + 5%. Suffix letter A denotes + 10%. No (COE) Of this Device is Approximately Suffix denotes + 20%. suffix denotes + 2%, and suffix denotes + 1%. +6PPM/C. The COE of the Mounting NOTE 2 Zener voltage is measured with the device junction in thermal equilibrium at an ambient Surface System Should Be Selected To temperature of 25C + 3C. Provide A Suitable Match With This Device. NOTE 3 Zener impedance is derived by superimposing on 1 A 60Hz rms a.c. current equal ZT to 10% of 1 . ZT 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: 5.1 VOLT 3.3 VOLT 27 VOLT 11 VOLT 6.2 VOLT CDLL957 thru CDLL986B FIGURE 2 500 400 300 200 100 0 0 25 50 75 100 125 150 175 T , End cap temperature (C) EC POWER DERATING CURVE 1000 500 400 300 200 100 50 40 30 20 10 5 4 3 2 1 .1 .2 .3 .4 .5 1 2 5 10 20 30 40 50 100 OPERATING CURRENT l (mA) ZT FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT 104 ZENER IMPEDANCE Z (OHMS) ZT Pd, Rated Power Dissipation (mW)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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