JANTXV1N5809US Microchip

1N5807US, 1N5809US, 1N5811US and URS Qualified Levels: VOID-LESS HERMETICALLY SEALED ULTRAFAST JAN, JANTX, Available on RECOVERY GLASS RECTIFIERS JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/477 DESCRIPTION This Ultrafast Recovery rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal Category 1 metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount B MELF packages. Important: For the latest information, visit our website 1N5807US, 1N5809US, 1N5811US and URS MECHANICAL and PACKAGING CASE: Hermetically sealed void-less hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body coated in blue with part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 539 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5807 US (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = Commercial Surface mount Package Type US = 2 Square end caps JEDEC type number URS = 1 Square + 1 Round end (See Electrical Characteristics cap table) SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature V RWM range. Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and I O a 180 degree conduction angle. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F I Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. R C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS @ T = 25 C unless otherwise stated A REVERSE SURGE REVERSE BREAKDOWN MAXIMUM FORWARD CURRENT CURRENT RECOVERY VOLTAGE VOLTAGE (MIN.) (MAX.) (MAX) TIME (MAX) @ 4 A (8.3 ms pulse) @ V I t @ 100 A V RWM FSM rr FM V I (Note 1) (Note 2) (BR) R TYPE Volts A o o o o Volts 25 C 125 C 25 C 125 C Amps ns 1N5807 60 0.875 0.800 5 525 125 30 1N5809 110 0.875 0.800 5 525 125 30 1N5811 160 0.875 0.800 5 525 125 30 o NOTES: 1. T = 25 C @ I = 3.0 A and V for ten 8.3 ms surges at 1 minute intervals. A O RWM 2. I = 1.0 A, I = 1.0 A, I = 0.10 A and di/dt = 100 A/ s min. F RM R(REC) T4-LDS-0168-1, Rev. 1 (120776) 2012 Microsemi Corporation Page 2 of 5