RRE04EA4DTR ROHM

Data Sheet Rectifier Diode RRE04EA4D Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General Rectification 2.90.1 0.1 0.4 Each read has same dimensions 0.160.1 0.05 0.06 (5) (4) Features 1)Small mold type. (TSMD5) 2)High Reliability. 0 0.1 0.330.03 (1) (2) (3) TSMD5 0.70.1 0.95 0.95 0.850.1 1.90.2 1.0Max Construction Structure Silicon epitaxial planer ROHM : TSMD5 dot (year week factory) Taping dimensions (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 1.10.1 4.00.1 3.20.08 1.10.08 Absolute maximum ratings (Ta=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V D0.5 400 V RM Reverse voltage V Direct voltage 400 V R Glass epoxy substrate mounted Average rectified forward current (*1) Io 0.4 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 2 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature - + C Tstg 55 to 150 (*1) 1/2 x Io at per diode Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V I =0.2A F 0.95 1.1 V F Reverse current I V =400V 0.01 1 A R R * per diode www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/4 0.2 1.6 0.1 2.80.2 0.30.6 3.20.08 00.5 5.50.2 3.50.05 1.750.1 8.00.2 3.20.08Data Sheet RRE04EA4D 1 1000 Tj=150C 100 Tj=125C 0.1 Tj=150C Tj=125C 10 Tj=75C Tj=25C 0.01 Tj=75C 1 Tj=25C per diode per diode 0.001 0.1 0 100 200 300 400 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (V) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 960 10 f=1MHz Tj=25C 955 I =0.2A F n=20pcs 950 per diode 945 1 940 935 AVE:941mV 930 925 per diode 0.1 920 0 10 20 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 100 5 4.5 Tj=25C Tj=25C f=1MHz V =400V R 4 V =0V n=20pcs R n=10pcs per diode 3.5 per diode 10 3 2.5 AVE:3.39pF 2 AVE:4.6nA 1 1.5 1 0.5 0.1 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R