X-On Electronics has gained recognition as a prominent supplier of RRE04EA4DTR Rectifiers across the USA, India, Europe, Australia, and various other global locations. RRE04EA4DTR Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the RRE04EA4DTR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRE04EA4DTR and other electronic components in the Rectifiers category and beyond.
Data Sheet Rectifier Diode RRE04EA4D Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General Rectification 2.90.1 0.1 0.4 Each read has same dimensions 0.160.1 0.05 0.06 (5) (4) Features 1)Small mold type. (TSMD5) 2)High Reliability. 0 0.1 0.330.03 (1) (2) (3) TSMD5 0.70.1 0.95 0.95 0.850.1 1.90.2 1.0Max Construction Structure Silicon epitaxial planer ROHM : TSMD5 dot (year week factory) Taping dimensions (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 1.10.1 4.00.1 3.20.08 1.10.08 Absolute maximum ratings (Ta=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V D0.5 400 V RM Reverse voltage V Direct voltage 400 V R Glass epoxy substrate mounted Average rectified forward current (*1) Io 0.4 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 2 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature - + C Tstg 55 to 150 (*1) 1/2 x Io at per diode Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V I =0.2A F 0.95 1.1 V F Reverse current I V =400V 0.01 1 A R R * per diode www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/4 0.2 1.6 0.1 2.80.2 0.30.6 3.20.08 00.5 5.50.2 3.50.05 1.750.1 8.00.2 3.20.08Data Sheet RRE04EA4D 1 1000 Tj=150C 100 Tj=125C 0.1 Tj=150C Tj=125C 10 Tj=75C Tj=25C 0.01 Tj=75C 1 Tj=25C per diode per diode 0.001 0.1 0 100 200 300 400 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (V) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 960 10 f=1MHz Tj=25C 955 I =0.2A F n=20pcs 950 per diode 945 1 940 935 AVE:941mV 930 925 per diode 0.1 920 0 10 20 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 100 5 4.5 Tj=25C Tj=25C f=1MHz V =400V R 4 V =0V n=20pcs R n=10pcs per diode 3.5 per diode 10 3 2.5 AVE:3.39pF 2 AVE:4.6nA 1 1.5 1 0.5 0.1 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R