MCP87018T-U/MF Microchip

MCP87018 High-Speed N-Channel Power MOSFET Features: Description: Low Drain-to-Source On Resistance (R ) The MCP87018 is an N-Channel power MOSFET in a DS(ON) popular PDFN 5mmx6mm package. Advanced Low Total Gate Charge (Q ) and Gate-to-Drain G Charge (Q ) packaging and silicon processing technologies allow GD the MCP87018 to achieve a low Q for a given R Low Series Gate Resistance (R ) G DS(on) G value, resulting in a low Figure of Merit (FOM). Fast Switching Combined with low R , the low FOM of the MCP87018 Capable of Short Dead-Time Operation G allows high-efficiency power conversion with reduced RoHS Compliant switching and conduction losses. Applications: Point-of-Load DC-DC Converters High-Efficiency Power Management in Servers, Networking and Automotive Applications Package Type PDFN 5 x 6 8 S 1 D S 2 7 D S 6 3 D 5 G 4 D Product Summary Table: Unless otherwise indicated, T = +25C. A Parameters Sym.Min.Typ.Max.Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V =0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 11.3 1.6 V V =V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 1.8 2.2 m V =4.5V, I = 25A DS(ON) GS D 1.5 1.9 m V = 10V, I = 25A GS D Total Gate Charge Q 32.5 37 nC V = 12.5V, I = 25A, V =4.5V G DS D GS Gate-to-Drain Charge Q 13 nC V = 12.5V, I = 25A GD DS D Series Gate Resistance R 1.5 G Thermal Characteristics Thermal Resistance Junction-to-X R 55 C/W Note 1 JX Thermal Resistance Junction-to-Case R 1.0 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of 2 oz. JX copper. This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2013 Microchip Technology Inc. DS20002329B-page 1MCP87018 Notice: Stresses above those listed under 1.0 ELECTRICAL Maximum Ratings may cause permanent damage to CHARACTERISTICS the device. This is a stress rating only and functional operation of the device at those or any other conditions Absolute Maximum Ratings above those indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................+25V DS rating conditions for extended periods may affect V ........................................................... +10.0V / -8V GS device reliability. I Continuous ................................. 100A, T =+25C D, C P .....................................................2.2W, T =+25C D A T , T ..............................................-55C to +150C J STG E Avalanche Energy.................................. 612.5 mJ AS I =35A, L= 1mH, R =25 D G DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C. A Parameters Sym.Min.Typ.Max.Units Conditions Static Characteristics Drain-to-Source BV 25 V V =0V, I = 250 A DSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V =0V, V =20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V =0V, V =10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 11.3 1.6 V V =V , I = 250 A GS(TH) DS GS D 2.2 V = 3.3V, I = 25A Drain-to-Source On Resistance R DS(ON) GS D 1.8 2.2 m V = 4.5V, I = 25A GS D 1.5 1.9 m V =10V, I =25A GS D 162 S V = 12.5V, I = 25A Transconductance g fs DS D Dynamic Characteristics Input Capacitance C 2925 pF V =0V, V =12.5V, f= 1MHz ISS GS DS 1305 pF V =0V, V =12.5V, f= 1MHz Output Capacitance C OSS GS DS Reverse Transfer Capacitance C 330 pF V =0V, V =12.5V, f= 1MHz RSS GS DS Total Gate Charge Q 32.5 37 nC V = 12.5V, I =25A, G DS D V =4.5V GS Gate-to-Drain Charge Q 13 nC V = 12.5V, I =25A GD DS D Gate-to-Source Charge Q 5.3 nC V = 12.5V, I =25A GS DS D Q 3.8 nC V = 12.5V, I =25A Gate Charge at V GS(TH) G(TH) DS D Output Charge Q 26 nC V = 12.5V, V =0 OSS DS GS Turn-On Delay Time t 6.53 ns V = 12.5V, V =4.5V, d(on) DS GS I = 25A, R =2 D G Rise Time t 28.3 ns V = 12.5V, V =4.5V, r DS GS I = 25A, R =2 D G Turn-Off Delay Time t 26.35 ns V = 12.5V, V =4.5V, d(off) DS GS I = 25A, R =2 D G Fall Time t 28.05 ns V = 12.5V, V =4.5V, f DS GS I = 25A, R =2 D G Series Gate Resistance R 1.5 G DS20002329B-page 2 2013 Microchip Technology Inc.