MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (R ) The MCP87055 device is an N-Channel power DS(ON) MOSFET in a popular PDFN 3.3mmx3.3mm Low Total Gate Charge (Q ) and Gate-to-Drain G package. Advanced packaging and silicon processing Charge (Q ) GD technologies allow the MCP87055 to achieve a low Q G Low Series Gate Resistance (R ) G for a given R value, resulting in a low Figure of DS(on) Fast Switching Merit (FOM). Combined with low R , the low Figure of G Capable of Short Dead-Time Operation Merit of the MCP87055 allows high-efficiency power ROHS Compliant conversion with reduced switching and conduction losses. Applications Point-of-Load DC-DC Converters High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 3.3 x 3.3 1 8 S D S 2 7 D S 3 6 D 5 G 4 D Product Summary Table: Unless otherwise indicated, T = +25C A Parameters SymMinTypMaxUnits Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 1.11.351.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 5.7 7 m V = 4.5V, I = 20A DS(ON) GS D 4.7 6 m V = 10V, I = 20A GS D Total Gate Charge Q 11 14 nC V = 12.5V, I = 20A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 4.5 nC V = 12.5V, I = 20A GD DS D Series Gate Resistance R 2.1 G Thermal Characteristics Thermal Resistance Junction-to-X R 66 C/W Note 1 JX Thermal Resistance Junction-to-Case R 3.4 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of JX 2 oz. copper. This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2012 Microchip Technology Inc. DS22323B-page 1MCP87055 Notice: Stresses above those listed under Maxi- 1.0 ELECTRICAL mum Ratings may cause permanent damage to the CHARACTERISTICS device. This is a stress rating only and functional oper- ation of the device at those or any other conditions Absolute Maximum Ratings above those indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................+25V DS rating conditions for extended periods may affect V ........................................................... +10.0V / -8V GS device reliability. I Continuous ......................................60A, T = 25C D, C P ..................................................... 1.8W, T = +25C D A T , T .............................................. -55C to +150C J STG E Avalanche Energy..................................... 162 mJ AS I =18A, L= 1mH, R =25 D G DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C A Parameters SymMinTypMaxUnits Conditions Static Characteristics Drain-to-Source B 25 V V = 0V, I = 250 A VDSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 1.11.351.7 V V = V , I = 250 A GS(TH) DS GS D 5.7 7 m V = 4.5V, I = 20A Drain-to-Source On Resistance R DS(ON) GS D 4.7 6 m V = 10V, I = 20A GS D Transconductance g 92 S V = 12.5V, I = 20A fs DS D Dynamic Characteristics Input Capacitance C 890 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 420 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS 114 pF V = 0V, V = 12.5V, f = 1 MHz Reverse Transfer Capacitance C RSS GS DS Total Gate Charge Q 11 14 nC V = 12.5V, I = 20A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 4.5 nC V = 12.5V, I = 20A GD DS D 1.8 nC V = 12.5V, I = 20A Gate-to-Source Charge Q GS DS D Gate Charge at VTH Q 1.1 nC V = 12.5V, I = 20A G(TH) DS D Output Charge Q 8 nCV = 12.5V, V = 0 OSS DS GS 4.5 ns V = 12.5V, V = 4.5V, Turn-On Delay Time t d(on) DS GS I = 20A, R = 2 D G Rise Time t 11 ns V = 12.5V, V = 4.5V, r DS GS I = 20A, R = 2 D G Turn-Off Delay Time t 9 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 20A, R = 2 D G Fall Time t 4.6 ns V = 12.5V, V = 4.5V, f DS GS I = 20A, R = 2 D G Series Gate Resistance R 2.1 G DS22323B-page 2 2012 Microchip Technology Inc.