MCP87030T-U/MF Microchip

MCP87030 High-Speed N-Channel Power MOSFET Features: Description: Low Drain-to-Source On Resistance (R ) The MCP87030 is an N-Channel power MOSFET in a DS(ON) popular PDFN 5mmx6mm package. Advanced Low Total Gate Charge (Q ) and Gate-to-Drain G Charge (Q ) packaging and silicon processing technologies allow GD the MCP87030 to achieve a low Q for a given R Low Series Gate Resistance (R ) G DS(on) G value, resulting in a low Figure of Merit (FOM). Fast Switching Combined with low R , the low FOM of the MCP87030 Capable of Short Dead-Time Operation G allows high efficiency power conversion with reduced RoHS Compliant switching and conduction losses. Applications: Point-of-Load DC-DC Converters High-Efficiency Power Management in Servers, Networking and Automotive Applications Package Type PDFN 5 x 6 SD1 8 S 2 7 D S 3 6 D D G45 Product Summary Table: Unless otherwise indicated, T = +25C A Parameters Sym.Min.Typ.Max.Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 11.3 1.6 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 3.3 4 m V = 4.5V, I = 20A DS(ON) GS D 2.8 3.5 m V = 10V, I = 20A GS D Total Gate Charge Q 17 22 nC V = 12.5V, I = 20A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 6.7 nC V = 12.5V, I = 20A GD DS D Series Gate Resistance R 1.2 G Thermal Characteristics Thermal Resistance Junction-to-X R 55 C/W Note 1 JX Thermal Resistance Junction-to-Case R 1.2 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of JX 2 oz. copper. This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2013 Microchip Technology Inc. DS200002328B-page 3MCP87030 Notice: Stresses above those listed under Maximum 1.0 ELECTRICAL Ratings may cause permanent damage to the device. CHARACTERISTICS This is a stress rating only and functional operation of the device at those or any other conditions above those Absolute Maximum Ratings indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................+25V DS rating conditions for extended periods may affect V ........................................................... +10.0V / -8V GS device reliability. I Continuous ................................. 100A, T = +25C D, C P .....................................................2.2W, T = +25C D A T , T ..............................................-55C to +150C J STG E Avalanche Energy..................................... 450 mJ AS I =30A, L= 1mH, R =25 D G DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C A Parameters Sym.Min.Typ.Max.Units Conditions Static Characteristics Drain-to-Source BV 25 V V = 0V, I = 250 A DSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 11.3 1.6 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 4 m V = 3.3V, I = 20A DS(ON) GS D 3.3 4 m V = 4.5V, I = 20A GS D 2.8 3.5 m V = 10V, I = 20A GS D Transconductance g 113 S V = 12.5V, I = 20A fs DS D Dynamic Characteristics Input Capacitance C 1635 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 730 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 160 pF V = 0V, V = 12.5V, f = 1 MHz RSS GS DS Total Gate Charge Q 17 22 nC V = 12.5V, I = 20A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 6.7 nC V = 12.5V, I = 20A GD DS D Gate-to-Source Charge Q 3.2 nC V = 12.5V, I = 20A GS DS D Gate Charge at V Q 2.1 nC V = 12.5V, I = 20A GS(TH) G(TH) DS D 14.3 nC V = 12.5V, V = 0 Output Charge Q OSS DS GS Turn-On Delay Time t 5 ns V = 12.5V, V = 4.5V, d(on) DS GS I = 20A, R = 2 D G Rise Time t 17 ns V = 12.5V, V = 4.5V, r DS GS I = 20A, R = 2 D G Turn-Off Delay Time t 14 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 20A, R = 2 D G Fall Time t 16 ns V = 12.5V, V = 4.5V, f DS GS I = 20A, R = 2 D G Series Gate Resistance R 1.2 G DS200002328B-page 4 2013 Microchip Technology Inc.