Product Information

MMA004AA

MMA004AA electronic component of Microchip

Datasheet
RF Amplifier MMIC Amplifier - 6-18GHz

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 56.9268 ea
Line Total: USD 56.93

34 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
34 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

MMA004AA
Microchip

1 : USD 57.6
20 : USD 55.3
35 : USD 53.075

     
Manufacturer
Product Category
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Test Frequency
Brand
Number Of Channels
Product Type
Factory Pack Quantity :
Subcategory
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MMA004AA 6-18GHz, 21dB Gain, 1.5dB NF Low Noise Amplifier Features 16dBm P with 1.5dB NF and SAT 21.5dB gain typical from 6-18GHz Gain flatness < +/-0.5dB Input and Output matched to 50 Self biased for simple biasing, small solu- tion size and ease of manufacture +24dBm maximum input power rating 1.1mm x 1.36mm x 0.1mm die size Applications Instrumentation Electronic warfare Microwave communications S & NF, V = 4.0V Power & OIP3, V = 4.0V 21 DD DD Typical Performance (CW, Typical Device, RF Probe): T =25C, V = 4V A D1,2 Parameter Min Typ Max Units Frequency 6 - 18 GHz Small Signal Gain 21.0 - 21.7 dB Noise Figure 1.5 1.6 1.8 dB Output Power, P 14.0 15.0 15 dBm 1dB Output Power P 15.0 16.0 17 dBm SAT Output IP3 26 29 31 dBm Drain Current 105 mA MM-PDS-0005 Rev A 1 of 13 Subject to Change Without Notice MMA004AA Table 1: Absolute Maximum Ratings, Not Simultaneous Parameter Rating Units Drain Voltage (V ) +4.5 V D Input Power (P ) 24 dBm IN 1 Channel Temperature (T ) 150 C C Caution, ESD Operating Ambient Temperature (T ) -55 to +85 C A Sensitive Device Storage Temperature -65 to +150 C Thermal Resistance, Channel to Die Backside TBD (140 est) C/W 1 7 MTTF T = 150C > 10 hours C Table 2: Specifications (CW, 100% Test): T = 25C, V = 4V, I = 100mA A DD DD Parameter Frequency Min Typ Max Units Small Signal Gain 18GHz 18.0 21.0 - dB Output Power, P 18GHz - 1.8 2.3 dBm 1dB 2 RF Probe Measurement Set-Up With Reference Planes TO VDD 100nF CAPACITOR 100nF CAPACITOR TO GROUND TO GROUND 100pF CAPACITOR 100pF CAPACITOR TO GROUND TO GROUND RFOUT RFIN 50 TRANSMISSION LINE MINIMIZE GAP 1mil Au wire used for all bonds 2 Reference planes are the same for S-parameter files downloadable on www.microsemi.com/mmics MM-PDS-0005 Rev A 2 of 13 Subject to Change Without Notice

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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