Product Information

MMA036AA

MMA036AA electronic component of Microchip

Datasheet
RF Amplifier DC-65GHz MMIC Low-Noise Amp PLFX

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 270.1865 ea
Line Total: USD 1080.75

0 - Global Stock
MOQ: 4  Multiples: 4
Pack Size: 4
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 50
Multiples : 50

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MMA036AA
Microchip

50 : USD 251.556

     
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MMA036AA DC to 65GHz Broadband MMIC Low-Noise Amplifier with PLFX Description Features Integrated PLFX technology: The MMA036AA is a seven stage traveling wave amplifier. The amplifier Allows use of less-expensive coil features Microsemi PLFX (Passive Low Very low power dissipation: Frequency eXtension) circuitry designed 4.5V, 85mA (383mW) to reduce the integration cost of the amplifier. High drain efficiency (38dBm/W) PLFX isolates the amplifier from bias Great 0.04-50GHz performance: inductor resonances, allowing use 10.5 1.25dB gain of a less-expensive coil. 14.5dBm Psat, 11dBm P1dB 5dB noise figure Application >30dB dynamic gain control The MMA036AA Broadband MMIC Low-Noise Integrated temperature-referenced Amplifier with PLFX is designed for high power detector output efficiency and low-noise broadband 100% DC, RF, and visually tested applications in RF and microwave Size: 1640x920um (64.6x36.2mil) communications, test equipment and ECCN 3A001.b.2.d military systems. By using specific external components, the bandwidth of operation can be extended below 40MHz. Key Characteristics: Vdd=4.5V, Idd=85mA, Zo=50 Specifications pertain to wafer measurements with RF probes and DC bias cards 25C 1.5 - 40GHz 0.04 - 50GHz 0.04 - 65GHz Parameter Description Min Typ Max Min Typ Max Min Typ Max S21 (dB) Small Signal Gain 9.5 11 9.5 10.5 8 10 - - - Flatness (dB) Gain Flatness - 0.5 1.25 - 1.25 1.75 - 1.5 2.0 S11 (dB) Input Match - -15 -12 - -15 -12 - -11 -9 S22 (dB) Output Match - -15 - -12 -12 -10 - -12 -9 S12 (dB) Reverse Isolation - -20 -17 - -18 -15 - -16 -13 P1dB (dBm) 1dB Compressed Output Power 11.5 13 9.5 11 - - - - - Psat (dBm) Saturated Output Power 14 15.5 - 14.5 - - - - - NF (dB) Noise Figure - 4.5 - - 5 - - - - RF (mV/mW) RF Detector Sensitivity - 0.5 - - 0.5 - - - - det SMD-00152 RevD 1 of 6 Subject to Change Without Notice MMA036AA Typical Performance S21 Noise Frequency Typical IC performance measured on-wafer Typical IC performance with package de-embedded S11, S22 S12 Typical IC performance measured on-wafer Typical IC performance measured on-wafer Output Power Group Delay Typical IC performance measured on-wafer Typical IC performance measured on-wafer SMD-00152 RevD 2 of 6 Subject to Change Without Notice

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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