Product Information

MSC050SDA120S

MSC050SDA120S electronic component of Microchip

Datasheet
Zero Recovery Silicon Carbide Schottky Diode 1200V 109A 3-Pin TO-268

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 20.8284 ea
Line Total: USD 20.83

29 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

MSC050SDA120S
Microchip

1 : USD 19.1621
30 : USD 17.8688
120 : USD 16.4924

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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MSC050SDA120S Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview 1.1 Features The following are key features of the MSC050SDA120S device: Low forward voltage Low leakage current No reverse recovery current/no forward recovery Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC050SDA120S device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC050SDA120S device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4091 MSC050SDA120S Datasheet Revision A 12 Device Specifications This section details the specifications for the MSC050SDA120S device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA120S device. All ratings at TC = 25 C unless otherwise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF Maximum DC forward current TC = 25 C 109 A TC = 135 C 49 TC = 145 C 41 IFRM Repetitive peak forward surge current (TC = 25 C, tp = 8.3 154 ms, half sine wave) IFSM Non-repetitive forward surge current (TC = 25 C, tp = 8.3 290 ms, half sine wave) Ptot Power dissipation TC = 25 C 429 W TC = 110 C 186 TJ , TSTG Operating junction and storage temperature range 55 to 175 C TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy (starting TJ = 25 C, L = 0.08 100 mJ mH, peak IL = 50 A) The following table shows the thermal and mechanical characteristics of the MSC050SDA120S Device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RJC Junction-to-case thermal resistance 0.24 0.35 C/W Wt Package weight 0.14 oz 3.9 g 053-4091 MSC050SDA120S Datasheet Revision A 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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