Product Information

MSCD100-08

MSCD100-08 electronic component of Microchip

Datasheet
Discrete Semiconductor Modules Power Module - Diode

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

MSCD100-08
Microchip

1 : USD 32.903
5 : USD 31.98
10 : USD 30.771
30 : USD 27.6625
50 : USD 26.9375
100 : USD 25.9875
250 : USD 24.2375
500 : USD 23.15
1000 : USD 23.15
N/A

Obsolete
0 - WHS 2

MOQ : 5
Multiples : 5

Stock Image

MSCD100-08
Microchip

5 : USD 25.6744
N/A

Obsolete
     
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Product Category
RoHS - XON
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MSKD100 MSAD100 MSCD100 Glass Passivated Rectifier Diode Modules VRRM 800 to 1800V IFAV 100Amp Applications y Non-controllable rectifiers for AC/AC converters y Line rectifiers for transistorized AC motor controllers y Field supply for DC motors Circuit Features y Blocking voltage:800 to 1800V y Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate y Glass passivated chip y UL E243882 approved Module Type TYPE VRRM VRSM MSCD100-08 MSAD100-08 MSKD100-08 800V 900V MSCD100-12 MSAD100-12 MSKD100-12 1200V 1300V MSCD100-16 MSAD100-16 MSKD100-16 1600V 1700V MSCD100-18 MSAD100-18 MSKD100-18 1800V 1900V Maximum Ratings Symbol Conditions Values Units IFAV Single phase ,half wave 180conduction Tc=109 100 A IF(RMS) Single phase ,half wave 180conduction Tc=97 150 A IFSM t=10mS Tvj =45 2500 A 2 2 i t t=10mS Tvj =45 31250 A s a.c.50HZ r.m.s. 1min 3000 V Visol -40 to +150 Tvj -40 to +125 Tstg Mt To terminals(M5) 315% Nm Ms To heatsink(M6) 515% Nm Weight Module (Approximately) 100 g Thermal Characteristics Symbol Conditions Values Units Per diode 0.35 /W Rth(j-c) Module 0.1 /W Rth(c-s) Electrical Characteristics Values Symbol Conditions Units Min. Typ. Max. T=25 IF =300A 1.22 1.35 V VFM Tvj=150 VRD=VRRM 5 mA IRD MSKD100 MSAD100 MSCD100 - Rev2 www.microsemi.com Oct, 2011 1/3 MSKD100 MSAD100 MSCD100 Performance Curves 200 150 DC W A sin.180 DC rec.120 100 rec.60 rec.30 sin.180 100 rec.120 50 rec.60 rec.30 Pvtot ID 0 0 0 ID 90 A 180 0 Tc 50 100 150 Fig2.Forward Current Derating Curve Fig1. Power dissipation 0.5 3000 50HZ A / W Zth(j-C) 0.25 1500 0 0 0.001 0.01 0.1 1.0 10 S 100 1 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Fig3. Transient thermal impedance Current 400 A 300 typ. 200 100 max. 25 IF - - -125 0 0 VF 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics MSKD100 MSAD100 MSCD100 - Rev2 www.microsemi.com Oct, 2011 2/3

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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