X-On Electronics has gained recognition as a prominent supplier of BSM120D12P2C005 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM120D12P2C005 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.
We are delighted to provide the BSM120D12P2C005 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM120D12P2C005 and other electronic components in the Discrete Semiconductor Modules category and beyond.
10 9 8 7 6 5 SiC Power Module BSM120D12P2C005 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 9 Photovoltaics, wind power generation. 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) 2 Features *Do not connect anything to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF- www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/9Datasheet BSM120D12P2C005 Absolute maximum ratings (Tj = 25C) Parameter Symbol Conditions Limit Unit Drain-source voltage V G-S short 1200 V DSS Gate-source voltage( ) 22 V V D-S short GSS Gate-source voltage( ) 6 V G - S voltage (t <300ns) V 10 to 26 D-S short V surge GSSsurge I 134 DC(Tc=60C) A D 1 Drain current * 2 I 240 A DRM Pulse (Tc=60C) 1ms * I DC(Tc =60C) V =18V 134 A S GS 1 Source current * *2 I 240 Pulse (Tc=60C) 1ms V =18V A SRM GS 3 Ptot Tc=25C 935 W Total power disspation * Max Junction Temperature Tjmax 175 C Junction temperature Tj 40 to150 C Storage temperature Tstg 40 to125 C Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 N m Mounting torque Mounting to heat shink : M5 screw 3.5 N m (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/9