R&E International
A Subsidiary of Microchip Technology Inc.
RE46C141
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
Features
General Description
Internal Power On Reset
The RE46C141 is low power CMOS photoelectric type
Low Quiescent Current Consumption
smoke detector IC. With minimal external components
this circuit will provide all the required features for a Available in 16L PDIP, 16L N SOIC or 16L W SOIC
photoelectric type smoke detector. ESD Protection on all Pins
Interconnect up to 40 Detectors
The design incorporates a gain selectable photo
Temporal Horn Pattern
amplifier for use with an infrared emitter/detector pair.
Low Battery and Chamber Test
An internal oscillator strobes power to the smoke
Compatible with Motorola MC145012
detection circuitry for 100us every 8.1 seconds to keep
UL Recognized per File S24036
standby current to a minimum. If smoke is sensed the
Available in Standard Packaging or RoHS
detection rate is increased to verify an alarm condition.
Compliant Pb Free Packaging.
A high gain mode is available for push button chamber
testing.
Pin Configuration
A check for a low battery condition and chamber
integrity is performed every 32 seconds when in
C1 TEST
1 16
standby. The temporal horn pattern supports the NFPA
72 emergency evacuation signal.
C2 LBSET
2 15
DETECT VSS
3 14
An interconnect pin allows multiple detectors to be
connected such that when one units alarms, all units
STROBE ROSC
4 13
will sound.
COSC
VDD 5 12
The RE46C141 is recognized by Underwriters
LED
IRED 6 11
Laboratories for use in smoke detectors that comply
with specification UL217 and UL268.
IO FEED
7 10
HORNB HORNS
8 9
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNITS
Supply Voltage V 12.5 V
DD
Input Voltage Range Except FEED, IO V -.3 to V+.3 V
in dd
FEED Input Voltage Range V -10 to +22 V
infd
IO Input Voltage Range V -.3 to 17 V
io1
Input Current except FEED I 10 mA
in
Operating Temperature T -25 to 75
C
A
Storage Temperature T -55 to 125
C
STG
Maximum Junction Temperature T 150
C
J
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when
handling this product. Damage can occur when exposed to extremely high static electrical charge.
2009 Microchip Technology Inc. DS22177B-page 1
RE46C141
CMOS Photoelectric Smoke Detector ASIC with Interconnect R&E International
Product Specification A Subsidiary of Microchip Technology Inc.
DC Electrical Characteristics at TA = -25 to 75C, VDD=9V, Typical Application (unless otherwise noted)
Limits
Test
Parameter Symbol Pin Test Conditions Min Typ Max Units
Supply Voltage
V 5 Operating 6 12 V
DD
Supply Current Configured as in Figure 2,
I 5 4 6 uA
DD1
COSC=VSS
Configured as in Figure 2,
I 5 5.5 8 uA
DD2
VDD=12V, COSC=VSS
Configured as in Figure 2,
I 5
2 mA
DD3
STROBE on, IRED off, VDD=12V
Configured as in Figure 2,
I 5 STROBE on, IRED on, VDD=12V, 3 mA
DD4
Note 1
Input Voltage High
V 10 FEED 6.2 4.5 V
IH1
V 7 No Local Alarm, IO as an Input 3.2 V
IH2
V 16 TEST 8.5 V
IH4
Input Voltage Low
V 10 FEED 4.5 2.7 V
IL1
V 7 No Local Alarm, IO as an Input 1.5 V
IL2
V 16 TEST 7 V
IL4
Input Leakage Low VDD=12V, COSC=12V, STROBE
I 1,2,3 -100 nA
IL1
active
I 12,15 VDD=12V, Vin=VSS -100 nA
IL2
I 16 VDD=12V, Vin=VSS -1 uA
IL3
I 10 FEED=-10V -50 uA
LFD
Input Leakage High VDD=12V, Vin=VDD, STROBE
I 1,2 100 nA
IH1
active
I 3,12,15 VDD=12V, Vin=VDD 100 nA
IH2
I 10 FEED=22V 50 uA
HFD
Input Pull Down Current
I 16 Vin=VDD .25 10 uA
PD1
I 7 Vin=VDD 20 80 uA
PDIO1
I 7 Vin=17V, VDD=12 140 uA
PDIO2
Output Leakage Current
I 11,13 Output Off, Output=VSS -1 uA
OZL1
Low
Output Leakage Current
I 11,13 Output Off, Output=VDD 1 uA
OZH1
High
Note 1: Does not include Q3 emitter current.
2009 Microchip Technology Inc. DS22177B-page 2