Product Information

SST25PF040B-80-4C-SAE

SST25PF040B-80-4C-SAE electronic component of Microchip

Datasheet
Microchip Technology Flash 2.3V to 3.6V 4Mbit SPI Serial Flash

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 1.1161
10 : USD 0.952
25 : USD 0.8754
100 : USD 0.7331
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Architecture
Speed
Memory Type
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

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Obsolete Device Please use SST25VF040B SST25PF040B 4 Mbit 2.3-3.6V SPI Serial Flash Features Product Description Single Voltage Read and Write Operations The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count - 2.33.6V package which occupies less board space and ulti- Serial Interface Architecture mately lowers total system costs. The SST25PF040B - SPI Compatible: Mode 0 and Mode 3 devices are enhanced with improved operating fre- High Speed Clock Frequency quency and lower power consumption. SST25PF040B - 80 MHz (2.7-3.6V operation) SPI serial flash memories are manufactured with pro- - 50 MHz (2.3-2.7V operation) prietary, high-performance CMOS SuperFlash technol- ogy. The split-gate cell design and thick-oxide tunneling Superior Reliability injector attain better reliability and manufacturability - Endurance: 100,000 Cycles (typical) compared with alternate approaches. - Greater than 100 years Data Retention The SST25PF040B devices significantly improve per- Low Power Consumption: formance and reliability, while lowering power con- - Active Read Current: 10 mA (typical) sumption. The devices write (Program or Erase) with a - Standby Current: 5 A (typical) single power supply of 2.3-3.6V for SST25PF040B. Flexible Erase Capability The total energy consumed is a function of the applied - Uniform 4 KByte sectors voltage, current, and time of application. Since for any - Uniform 32 KByte overlay blocks given voltage range, the SuperFlash technology uses - Uniform 64 KByte overlay blocks less current to program and has a shorter erase time, the total energy consumed during any Erase or Pro- Fast Erase and Byte-Program: gram operation is less than alternative flash memory - Chip-Erase Time: 35 ms (typical) technologies. - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 s (typical) The SST25PF040B device is offered in an 8-lead SOIC (150 mils), 8-lead SOIC (200 mils), and 8-contact Auto Address Increment (AAI) Programming WSON (6mm x 5mm) packages. See Figure 2-1 for pin - Decrease total chip programming time over assignments. Byte-Program operations End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ) - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ) - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register Temperature Range - Commercial: 0C to +70C Packages Available - 8-lead SOIC (150 mils) - 8-lead SOIC (200 mils) - 8-contact WSON (6mm x 5mm) All devices are RoHS compliant 2014 Microchip Technology Inc. DS20005134B-page 1SST25PF040B 1.0 FUNCTIONAL BLOCK DIAGRAM SuperFlash X - Decoder Memory Address Buffers and Latches Y - Decoder I/O Buffers and Control Logic Data Latches Serial Interface CE SCK SI SO WP HOLD 25134 B1.0 FIGURE 1-1: FUNCTIONAL BLOCK DIAGRAM DS20005134B-page 2 2014 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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