Product Information

SST25VF020-20-4C-SAE

SST25VF020-20-4C-SAE electronic component of Microchip

Datasheet
Microchip Technology Flash 256K X 8 14 us

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0408 ea
Line Total: USD 1.0408

2302 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
505 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 100
Multiples : 100
100 : USD 1.0239

2302 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 1.0408
25 : USD 1.0097
100 : USD 0.9626

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Architecture
Speed
Memory Type
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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2 Mbit SPI Serial Flash SST25VF020 SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory Data Sheet FEATURES: Single 2.7-3.6V Read and Write Operations End-of-Write Detection Serial Interface Architecture Software Status SPI Compatible: Mode 0 and Mode 3 Hold Pin (HOLD ) 20 MHz Max Clock Frequency Suspends a serial sequence to the memory without deselecting the device Superior Reliability Write Protection (WP ) Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Enables/Disables the Lock-Down function of the status register Low Power Consumption: Software Write Protection Active Read Current: 7 mA (typical) Standby Current: 8 A (typical) Write protection through Block-Protection bits in status register Flexible Erase Capability Temperature Range Uniform 4 KByte sectors Uniform 32 KByte overlay blocks Commercial: 0C to +70C Industrial: -40C to +85C Fast Erase and Byte-Program: Extended: -20C to +85C Chip-Erase Time: 70 ms (typical) Packages Available Sector- or Block-Erase Time: 18 ms (typical) Byte-Program Time: 14 s (typical) 8-lead SOIC 150 mil body width 8-contact WSON (5mm x 6mm) Auto Address Increment (AAI) Programming All non-Pb (lead-free) devices are RoHS compliant Decrease total chip programming time over Byte-Program operations PRODUCT DESCRIPTION The SST serial flash family features a four-wire, SPI- rent, and time of application. Since for any given voltage compatible interface that allows for a low pin-count pack- range, the SuperFlash technology uses less current to age occupying less board space and ultimately lowering program and has a shorter erase time, the total energy total system costs. SST25VF020 SPI serial flash memo- consumed during any Erase or Program operation is less ries are manufactured with SSTs proprietary, high perfor- than alternative flash memory technologies. The mance CMOS SuperFlash Technology. The split-gate SST25VF020 device operates with a single 2.7-3.6V cell design and thick-oxide tunneling injector attain better power supply. reliability and manufacturability compared with alternate The SST25VF020 device is offered in an 8-lead SOIC 150 approaches. mil body width (SA) package, and in an 8-contact WSON The SST25VF020 device significantly improves perfor- package. See Figure 2 for the pin assignments. mance, while lowering power consumption. The total energy consumed is a function of the applied voltage, cur- 2006 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. S71231-07-000 10/06 These specifications are subject to change without notice. 12 Mbit SPI Serial Flash SST25VF020 Data Sheet SuperFlash X - Decoder Memory Address Buffers and Latches Y - Decoder I/O Buffers Control Logic and Data Latches Serial Interface 1231 B1.0 CE SCK SI SO WP HOLD FIGURE 1: Functional Block Diagram 2006 Silicon Storage Technology, Inc. S71231-07-000 10/06 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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