Product Information

SST25VF020B-80-4C-QAE-T

SST25VF020B-80-4C-QAE-T electronic component of Microchip

Datasheet
NOR Flash 2.7V to 3.6V 2Mbit SPI Serial Flash

Manufacturer: Microchip
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Price (USD)

2000: USD 1.1635 ea
Line Total: USD 2327

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 2000
Multiples : 2000
2000 : USD 1.4166

     
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SST25VF020B 2-Mbit SPI Serial Flash Features Packages Single Voltage Read and Write Operations: 8-Lead SOIC (150 mils), 8-Contact USON (3 mm x 2 mm) and 8-Contact WSON - 2.7V-3.6V (6 mm x 5 mm) Serial Interface Architecture: - SPI Compatible: Mode 0 and Mode 3 Description High-Speed Clock Frequency: The 25 series Serial Flash family features a four-wire, - Up to 80 MHz SPI compatible interface that allows for a low pin count Superior Reliability: package which occupies less board space and ulti- - Endurance: 100,000 cycles mately lowers total system costs. The SST25VF020B - Greater than 100 years data retention devices are enhanced with improved operating Low-Power Consumption: frequency and even lower power consumption. - Active Read current: 10 mA (typical) SST25VF020B SPI serial Flash memories are manu- - Standby Current: 5 A (typical) factured with SST proprietary, high-performance Flexible Erase Capability: CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better - Uniform 4-Kbyte sectors reliability and manufacturability compared with alter- - Uniform 32-Kbyte overlay blocks nate approaches. - Uniform 64-Kbyte overlay blocks The SST25VF020B devices significantly improve per- Fast Erase and Byte Program: formance and reliability, while lowering power con- - Chip Erase time: 35 ms (typical) sumption. The devices write (Program or Erase) with a - Sector/Block Erase time: 18 ms (typical) single power supply of 2.7V-3.6V for SST25VF020B. - Byte Program time: 7 s (typical) The total energy consumed is a function of the applied voltage, current and time of application. Since for any Auto Address Increment (AAI) Programming: given voltage range the SuperFlash technology uses - Decrease total chip programming time over less current to program and has a shorter erase time, Byte Program operations the total energy consumed during any erase or pro- End-of-Write Detection: gram operation is less than alternative Flash memory - Software polling the BUSY bit in STATUS technologies. register See Figure 2-1 for pin assignments. - Busy Status readout on SO pin in AAI mode Hold Pin (HOLD ): - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ): - Enables/Disables the Lock-Down function of the STATUS register Software Write Protection: - Write protection through Block Protection bits in STATUS register Temperature Ranges: - Commercial: 0C to +70C - Industrial (I): -40C to +85C All devices are RoHS compliant 2012-2020 Microchip Technology Inc. DS20005054D-page 1SST25VF020B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
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Microsemi Analog Mixed Signal Group
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SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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