SST25VF040B-50-4I-SAE-T Microchip

SST25VF040B-50-4I-SAE-T electronic component of Microchip
SST25VF040B-50-4I-SAE-T Microchip
SST25VF040B-50-4I-SAE-T NOR Flash
SST25VF040B-50-4I-SAE-T  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SST25VF040B-50-4I-SAE-T NOR Flash across the USA, India, Europe, Australia, and various other global locations. SST25VF040B-50-4I-SAE-T NOR Flash are a product manufactured by Microchip. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

Part No. SST25VF040B-50-4I-SAE-T
Manufacturer: Microchip
Category: NOR Flash
Description: Microchip Technology Flash Memory 2.7V to 3.6V 4Mbit SPI Serial Flash
Datasheet: SST25VF040B-50-4I-SAE-T Datasheet (PDF)
Price (USD)
250: USD 1.375 ea
Line Total: USD 343.75 
Availability : 3201
  
Ship by Wed. 24 Sep to Tue. 30 Sep
QtyUnit Price
250$ 1.375
500$ 1.3625
1000$ 1.3625
3300$ 1.35
6600$ 1.35
9900$ 1.3375
13200$ 1.3375

Availability 3201
Ship by Wed. 24 Sep to Tue. 30 Sep
MOQ : 250
Multiples : 1
QtyUnit Price
250$ 1.375
500$ 1.3625
1000$ 1.3625
3300$ 1.35
6600$ 1.35
9900$ 1.3375
13200$ 1.3375


Availability 2507
Ship by Wed. 24 Sep to Tue. 30 Sep
MOQ : 194
Multiples : 1
QtyUnit Price
194$ 1.3831
195$ 1.3791
195$ 1.377
196$ 1.3748
250$ 1.3725
500$ 1.3177
1000$ 1.3156


Availability 2888
Ship by Mon. 22 Sep to Wed. 24 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4444
25$ 1.2814
100$ 1.1803
3300$ 1.1803


Availability 3152
Ship by Wed. 24 Sep to Tue. 30 Sep
MOQ : 250
Multiples : 250
QtyUnit Price
250$ 2.0764
500$ 2.0584
1000$ 2.0403
3500$ 1.9681


Availability 2507
Ship by Wed. 24 Sep to Tue. 30 Sep
MOQ : 194
Multiples : 1
QtyUnit Price
194$ 1.3831
195$ 1.3777
195$ 1.3759
196$ 1.374
250$ 1.3721
500$ 1.3174
1000$ 1.3156

   
Manufacturer
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SST25VF040B-50-4I-SAE-T from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST25VF040B-50-4I-SAE-T and other electronic components in the NOR Flash category and beyond.

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SST25VF040B 4-Mbit SPI Serial Flash Features Packages Single Voltage Read and Write Operations: 8-lead SOIC (208 mils), 8-lead SOIC (150 mils) and 8-contact WSON (6 mm x 5 mm) - 2.7V-3.6V Serial Interface Architecture: Description - SPI Compatible: Mode 0 and Mode 3 High-Speed Clock Frequency: The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count - Up to 50 MHz package which occupies less board space and ulti- Superior Reliability: mately lowers total system costs. The SST25VF040B - Endurance: 100,000 Cycles (typical) devices are enhanced with improved operating fre- - Greater than 100 years Data Retention quency and even lower power consumption. Low-Power Consumption: SST25VF040B SPI serial Flash memories are manu- - Active Read Current: 10 mA (typical) factured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and - Standby Current: 5 A (typical) thick-oxide tunneling injector attain better reliability and Flexible Erase Capability: manufacturability compared with alternate approaches. - Uniform 4-Kbyte sectors SST25VF040B devices significantly improve perfor- - Uniform 32-Kbyte overlay blocks mance and reliability, while lowering power consump- - Uniform 64-Kbyte overlay blocks tion. The devices write (Program or Erase) with a single Fast Erase and Byte Program: power supply of 2.7V-3.6V for SST25VF040B. The total - Chip Erase Time: 35 ms (typical) energy consumed is a function of the applied voltage, current, and time of application. Since for any given - Sector/Block Erase Time: 18 ms (typical) voltage range, the SuperFlash technology uses less - Byte Program Time: 7 s (typical) current to program and has a shorter erase time, the Auto Address Increment (AAI) Programming: total energy consumed during any erase or program - Decrease total chip programming time over operation is less than alternative Flash memory tech- Byte Program operations nologies. End of Write Detection: See Figure 2-1 for pin assignments. - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ): - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ): - Enables/Disables the Lock-Down function of the STATUS register Software Write Protection: - Write protection through Block Protection bits in STATUS register Temperature Range: - Commercial: 0C to +70C - Industrial: -40C to +85C All devices are RoHS compliant 2005-2020 Microchip Technology Inc. DS20005051E-page 1SST25VF040B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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