SST26VF032BEUI
32 Mbit Serial Quad I/O (SQI) Flash Memory with EUI-48
and EUI-64 Identifier
- 64 KByte blocks, two 32 KByte blocks, and
Features
eight 8 KByte parameter blocks
Factory-Programmed with EUI-48 and EUI-64
- Read Protection on top and bottom 8 KByte
Globally Unique Identifier
parameter blocks
- Secure, read-only access in Serial Flash
Security ID
Discoverable Parameter (SFDP) table
- One-Time Programmable (OTP) 2 KByte, Secure ID
Single Voltage Read and Write Operations
- 64 bit unique, factory pre-programmed identifier
- 2.7-3.6V or 2.3-3.6V
- User-programmable area
Serial Interface Architecture
Temperature Range
- Nibble-wide multiplexed I/Os with SPI-like serial
- Industrial: -40C to +85C
command structure
Automotive AECQ-100 Qualified
- Mode 0 and Mode 3
Packages Available
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
- 8-lead SOIJ (5.28 mm)
High Speed Clock Frequency
All devices are RoHS compliant
- 2.7-3.6V: 104 MHz max
- 2.3-3.6V: 80 MHz max
Product Description
Burst Modes
- Continuous linear burst
The Serial Quad I/O (SQI) family of flash-memory
- 8/16/32/64 Byte linear burst with wrap-around devices features a six-wire, 4-bit I/O interface that allows for
low-power, high-performance operation in a low pin-count
Superior Reliability
package. SST26VF032BEUI also support full command-set
- Endurance: 100,000 Cycles (min)
compatibility to traditional Serial Peripheral Interface (SPI)
- Greater than 100 years Data Retention
protocol. System designs using SQI flash devices occupy
Low Power Consumption:
less board space and ultimately lower system costs.
- Active Read current: 15 mA (typical @ 104 MHz)
All members of the 26 Series, SQI family are manufactured
- Standby Current: 15 A (typical)
with proprietary, high-performance CMOS SuperFlash
Fast Erase Time
technology. The split-gate cell design and thick-oxide tun-
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
neling injector attain better reliability and manufacturability
- Chip Erase: 35 ms (typ), 50 ms (max)
compared with alternate approaches.
Page-Program
SST26VF032BEUI significantly improve performance and
- 256 Bytes per page in x1 or x4 mode
reliability, while lowering power consumption. These devices
End-of-Write Detection write (Program or Erase) with a single power supply of 2.3-
3.6V. The total energy consumed is a function of the applied
- Software polling the BUSY bit in status register
voltage, current, and time of application. Since for any given
Flexible Erase Capability
voltage range, the SuperFlash technology uses less current
- Uniform 4 KByte sectors
to program and has a shorter erase time, the total energy
- Four 8 KByte top and bottom parameter overlay
consumed during any Erase or Program operation is less
blocks
than alternative flash memory technologies.
- One 32 KByte top and bottom overlay block
SST26VF032BEUI is offered in 8-lead SOIJ (5.28 mm).
- Uniform 64 KByte overlay blocks
See Figure 2-1 for pin assignments.
Write-Suspend
SST26VF032BEUI default at power-up has the WP#
- Suspend Program or Erase operation to access
and HOLD# pins enabled, and the SIO2 and SIO3
another block/sector
pins disabled, to initiate SPI-protocol operations.See
Software Reset (RST) mode
I/O Configuration (IOC) on page 11 for more
Software Write Protection
information about configuring WP#/HOLD# and SIO2/
- Individual-Block Write Protection with permanent
SIO3 pins.
lock-down capability
2019 Microchip Technology Inc. DS20006152A-page 1SST26VF032BEUI
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