SY10EP05VZG-TR

SY10EP05V 3.3V/5V ECL Differential AND/NAND Features General Description 3.3V or 5V Power Supply Options The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 180 ps Typical Propagation Delay device. With AC performance much faster that the Maximum Frequency: 3 GHz Typical EL05 device, the EP05V is ideal for applications Internal Input Resistors: Pull-Down on D, requiring the fastest AC performance available. Pull-Down and Pull-Up on /D Q Output will Default Low with Inputs Open or at Package Type V EE Transistor Count: 126 SY10EP05V Available in 8-Lead SOIC Package SOIC-8 (Z) (Top View) D0 1 8VCC /D0 2 7 Q D1 3 6 /Q /D1 4 5 VEE 2020 Microchip Technology Inc. 1DS20006252A-page SY10EP05V 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings PECL Power Supply Voltage (V ) ( Note 1) ...........................................................................................................+6.0V CC NECL Power Supply Voltage (V ) ( Note 2) ...........................................................................................................6.0V EE PECL Mode Input Voltage (V ) (Note 3).................................................................................................................+6.0V IN NECL Mode Input Voltage (V ) (Note 4).................................................................................................................6.0V IN Continuous Output Current (I ) .......................................................................................................................... 50 mA OUT Surge Output Current (I )................................................................................................................................. 100 mA OUT Notice: Stresses above those listed under Absolute Maximum ratings may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: V = 0V. EE 2: V = 0V. CC 3: V = 0V, V V . EE IN CC 4: V = 0V, V V . CC IN EE DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: V = 3.0V to 5.5V V = 0V or V = 5.5V to 3.0V V = 0V T = 40C to +85C, CC EE EE CC A unless otherwise stated, (Note 1) Parameter Symbol Min. Typ. Max. Units Condition Power Supply Current I 22 29 mA EE V 1.135 V 1.060 V 0.885 T = 40C CC CC CC A Output High Voltage V V 1.070 V 0.945 V 0.820 V T = +25C OH CC CC CC A ( Note 2) V 1.010 V 0.885 V 0.760 T = +85C CC CC CC A V 1.950 V 1.810 V 1.685 T = 40C CC CC CC A Output Low Voltage V V 1.950 V 1.745 V 1.620 V T = +25C OL CC CC CC A ( Note 2) V 1.950 V 1.685 V 1.560 T = +85C CC CC CC A V 1.210 V 0.885 T = 40C CC CC A Input High Voltage V V 1.145 V 0.820 V T = +25C IH CC CC A (Single-Ended) V 1.085 V 0.760 T = +85C CC CC A V 1.935 V 1.610 T = 40C CC CC A Input Low Voltage V V 1.870 V 1.545 V T = +25C IL CC CC A (Single-Ended) V 1.810 V 1.485 T = +85C CC CC A Common Mode Range V V + 2.0 V V IHCMR EE CC (Note 3) Input High Current I 150 A IH Input Low Current D 0.5 I A V = V IL IN IL(MIN) Input Low Current /D 150 Note 1: Devices are designed to meet the DC specifications shown in the table above after thermal equilibration has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 2: Outputs are terminated through a 50 resistor to V 2.0V. CC 3: The CMR range is referenced to the most positive side of the differential input voltage. Normal operation is obtained if the high level falls within the specified range and the peak-to-peak voltage lies between 150 mV and 1.2V. 2DS20006252A-page 2020 Microchip Technology Inc.