TAN250A 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, Style 1 The TAN250A is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation 25 C 575 W Maximum Voltage and Current Collector to Base Voltage (BV) 60 V ces Emitter to Base Voltage (BV) 4.0 V ebo Collector Current (I ) 30 A c Maximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS 25C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS P Power Out F = 960-1215 MHz 250 W out P Power Input Vcc = 50 Volts 60 W in P Power Gain 6.2 7.0 dB PW = 20 sec g Collector Efficiency DF = 5% 40 % c VSWR Load Mismatch Tolerance F = 1090 MHz 5:1 FUNCTIONAL CHARACTERISTICS 25 C BV Emitter to Base Breakdown Ie = 20 mA 4.0 V ebo BV Collector to Emitter Breakdown Ic = 25 mA 60 V ces h DC Current Gain Vce = 5V, Ic = 1 A 10 FE 2 Thermal Resistance .3 jc C/W NOTE 1: At rated output power and pulse conditions 2. At rated pulse conditions . Revision A, August 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our website at www.microsemi.com or contact our factory direct Microsemi Corporation 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 TAN250A June 1996 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our website at www.microsemi.com or contact our factory direct Microsemi Corporation 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031