MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES Low Noise Figure: NF=1.45dB (typ.) ( f=1GHz) 2 High Gain: S21e =11dB (typ.) ( f=1GHz) Marking M U PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Absolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 1.5 V EBO Collector current I 80 mA C Base current I 10 mA B Collector power dissipation P 400 mW C Collector power dissipation P(Note1) 1.8 W C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note.1 : The device is mounted on a ceramic board (25mm X 25mm X 0.8 mm (t)) Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-06 1 2014-03-01 MT3S20P Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V = 5V, I = 30mA 5 7 GHz T CE C 2 S21e (1) V = 5V, I = 50mA, f = 500MHz 16.5 CE C Insertion gain dB 2 S21e (2) V = 5V, I = 50mA, f = 1GHz 9 11 CE C Noise figure NF V = 5V, I = 20mA, f = 1GHz 1.45 2 dB CE C rd V = 5V, I = 50mA, f = 500MHz, 3 order intermodulation distortion output CE C OIP3 27.5 31.5 dBmW intercept point f=1MHz Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 10V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 1V, I = 0 0.5 A EBO EB C DC current gain hFE V = 5V, I= 50mA 100 150 200 - CE C Reverse transfer capacitance C V = 5V, I = 0, f = 1MHz (Note3) 0.85 1.1 pF re CB E Note.3 : C is measured using a 3-terminal method with capacitance bridge. re Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2014-03-01