LOT No. LOT No. NSVF5490SK RF Transistor for Low Noise Amplifier 20 V, 30 mA, f = 8 GHz typ. RF Transistor T This RF transistor is designed for RF amplifier applications. SSFP www.onsemi.com package is contribute to down size of application because it is small surface mount package. This RF transistor is AECQ101 qualified and PPAP capable for automotive applications. 3 1 Features 2 Lownoise Use: NF = 0.9 dB typ. (f = 1 GHz) SOT623 / SSFP High Cutoff Frequency: f = 8 GHz typ. (V = 5 V) CASE 631AC T CE 2 High Gain: S21e = 10 dB typ. (f = 1.5 GHz) Lowvoltage, Lowcurrent Operation (V = 1 V, I = 1 mA) ELECTRICAL CONNECTION NPN CE C f = 3.5 GHz typ. T 3 2 S21e = 5.5 dB typ. (f = 1.5 GHz) SSFP Package is Pincompatible with SOT623 AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 : Base 2 : Emitter Compliant 2 3 : Collector Typical Applications RF Amplifier for RKE MARKING DIAGRAM RF Amplifier for ADAS RF Amplifier for Remote Engine Starter MN MN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2019 Rev. 0 NSVF5490SK/DNSVF5490SK SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Value Unit Collector to Base Voltage V 20 V CBO Collector to Emitter Voltage V 10 V CEO Emitter to Base Voltage V 1.5 V EBO Collector Current I 30 mA C Collector Dissipation P mW 100 C Operating Junction and Storage Temperature Tj, Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = 25C Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = 10 V, I = 0 A 1.0 A CBO CB E Emitter Cutoff Current I V = 1 V, I = 0 A 10 A EBO EB C DC Current Gain h V = 5 V, I = 10 mA 90 200 FE CE C GainBandwidth Product f 1 V = 5 V, I = 10 mA 5 8 GHz T CE C f 2 V = 1 V, I = 1 mA 3.5 GHz T CE C Output Capacitance Cob V = 10 V, f = 1 MHz 0.45 0.7 pF CB Reverse Transfer Capacitance Cre 0.3 pF 2 Forward Transfer Gain S21e 1 V = 5 V, I = 10 mA, f = 1.5 GHz 8 10 dB CE C 2 S21e 2 V = 1 V, I = 1 mA, f = 1.5 GHz 5.5 dB CE C Noise Figure NF1 V = 5 V, I = 5 mA, f = 1.5 GHz 1.4 3.0 dB CE C NF2 V = 2 V, I = 3 mA, f = 1 GHz 0.9 dB CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted. www.onsemi.com 2