Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description High voltage, vertical DMOS technology The Supertex TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN Integrated gate-to-source resistor package. All MOSFETs have integrated gate-to-source resistors Integrated gate-to-source Zener diode and gate-to-source Zener diode clamps which are desired for Typical peak output +/-3.5A at 50V high voltage pulser applications. The complimentary, high-speed, Low threshold, low on-resistance high voltage, gate-clamped N- and P-channel MOSFET pairs Low input & output capacitance utilize an advanced vertical DMOS structure and Supertexs well- Fast switching speeds proven silicon-gate manufacturing process. This combination Electrically isolated N- and P-MOSFET pairs produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive Applications temperature coefficient inherent in MOS devices. High voltage pulsers Amplifiers Characteristic of all MOS structures, this device is free from Buffers thermal runaway and thermally-induced secondary breakdown. Piezoelectric transducer drivers Supertexs vertical DMOS FETs are ideally suited to a wide General purpose line drivers range of switching and amplifying applications where very Logic level interfaces low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired. Typical Application VPP1 +3.3V +12V +12V +12V VPP2 VLL/EN AVDD VDD2 SP3 SP2 SP4 VDD1 SP6 SP5 SP1 OP1A GP1 DP1 10nF ON1A GN1 DN1 10nF OP2A GP2 DP2 TX(A) 10nF ON2A GN2 SELA DN2 10nF OP3A GP3 POSA DP3 ON3A GN3 1.8 to 3.3V NEGA DN3 CMOS MD1715 TC8020 OP1B GP4 Input Logic POSB DP4 10nF ON2A GN4 NEGB DN4 10nF OP2B GP5 SELB DP5 TX(B) 10nF ON2B GN5 DN5 10nF OP3B GP6 DP6 GN6 ON3B DN6 AGND GND AVSS VSS PAD SN6 SN3 SN5 SN2 SN4 SN1 (SUB) -12V -12V VNN2 VNN1 Supertex inc. Doc. DSFP-TC8020 C091112 www.supertex.comTC8020 Ordering Information Product Summary BV /BV R DSS DGS DS(ON) Part Number Package Option Packing (V) (max) () TC8020K6-G 56-Lead QFN (8x8) 250/Tray N-Channel P-Channel N-Channel P-Channel -G indicates package is RoHS compliant (Green) 200 -200 8.0 9.5 Pin Configuration 56 1 Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Operating and storage temperature -55C to +150C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Thermal Characteristics 56-Lead QFN (K6) Package ja Top View O 56-Lead QFN (K6) 27 C/W Note: Package Marking 1.0oz, 4-layer, 3x4 PCB L = Lot Number TC8020K6 YY = Year Sealed WW = Week Sealed LLLLLLLLL A = Assembler ID YYWW C = Country of Origin AAA CCC = Green Packaging Package may or may not include the following marks: Si or 56-Lead QFN (K6) Supertex inc. Doc. DSFP-TC8020 C091112 www.supertex.com 2