Product Information

TN0620N3-G

TN0620N3-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 200V; 1A; 1W; TO92

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 1.1562 ea
Line Total: USD 28.9

1779 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
1779 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 25
Multiples : 25

Stock Image

TN0620N3-G
Microchip

25 : USD 1.1562
250 : USD 1.0588
500 : USD 1.0425
1000 : USD 1.0013
3000 : USD 0.95
5000 : USD 0.9362
8000 : USD 0.9225
10000 : USD 0.9088

669 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TN0620N3-G
Microchip

1 : USD 1.399
10 : USD 1.3325
25 : USD 1.3059
50 : USD 1.3059
100 : USD 1.3059

378 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TN0620N3-G
Microchip

1 : USD 1.6997
10 : USD 1.5809
25 : USD 1.5494
50 : USD 1.5494
100 : USD 1.5494

5543 - WHS 4


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TN0620N3-G
Microchip

1 : USD 1.5985
25 : USD 1.357
100 : USD 1.265

144 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TN0620N3-G
Microchip

1 : USD 1.963
5 : USD 1.846
10 : USD 1.807
25 : USD 1.703
100 : USD 1.677

144 - WHS 6


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 40
Multiples : 1

Stock Image

TN0620N3-G
Microchip

40 : USD 2.3959

669 - WHS 7


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 9
Multiples : 1

Stock Image

TN0620N3-G
Microchip

9 : USD 1.399
10 : USD 1.3325
25 : USD 1.3059

970 - WHS 8


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1000
Multiples : 1000

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TN0620N3-G
Microchip

1000 : USD 1.4322
2000 : USD 1.4167
3000 : USD 1.4016
5000 : USD 1.3735

378 - WHS 9


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 8
Multiples : 1

Stock Image

TN0620N3-G
Microchip

8 : USD 1.6997
10 : USD 1.5809
25 : USD 1.5494

161 - WHS 10


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 32
Multiples : 1

Stock Image

TN0620N3-G
Microchip

32 : USD 1.2597

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (110pF typical) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced secondary breakdown. Complementary N- and P-channel devices Supertexs vertical DMOS FETs are ideally suited to a Applications wide range of switching and amplifying applications where Logic level interfaces - ideal for TTL and CMOS very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Solid state relays speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R I V Package Option DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) TO-92 () (A) (V) TN0620 TN0620N3-G 200 6.0 1.0 1.6 -G indicates package is RoHS compliant (Green) Pin Congurations Absolute Maximum Ratings DRAIN SOURCE Parameter Value Drain-to-source voltage BV DSS GATE Drain-to-gate voltage BV DGS TO-92 (N3) Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C Product Marking O Soldering temperature* 300 C T N Absolute Maximum Ratings are those values beyond which damage to the device YY = Year Sealed may occur. Functional operation under these conditions is not implied. Continuous 0 6 2 0 WW = Week Sealed operation of the device at the absolute rating level may affect device reliability. All Y Y W W = Green Packaging voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TO-92 (N3) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN0620 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 250 2.0 1.0 125 170 250 2.0 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 200 - - V V = 0V, I = 2.0mA DSS GS D V Gate threshold voltage 0.6 - 1.6 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA V = 0V, T = 125C GS A 0.5 - - V = 5.0V, V = 25V GS DS I On-state drain current A D(ON) 1.0 - - V = 10V, V = 25V GS DS - 6.0 8.0 V = 5.0V, I = 250mA GS D R Static drain-to-source on-state resistance DS(ON) - 4.0 6.0 V = 10V, I = 500mA GS D O R Change in R with temperature - - 1.4 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 300 400 - mmho V = 25V, I = 500mA FS DS D C Input capacitance - 110 150 ISS V = 0V, GS C Common source output capacitance - 40 85 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 10 35 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 8.0 r I = 1.0A, ns D t Turn-off delay time - - 20 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 1.0A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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