TN0620N3-G Microchip

TN0620N3-G electronic component of Microchip
TN0620N3-G Microchip
TN0620N3-G MOSFETs
TN0620N3-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TN0620N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0620N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TN0620N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 200V; 1A; 1W; TO92
Datasheet: TN0620N3-G Datasheet (PDF)
Price (USD)
1000: USD 0.4555 ea
Line Total: USD 455.5 
Availability : 970
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
1000$ 0.4555
2000$ 0.4552
3000$ 0.455
4000$ 0.4547
5000$ 0.4544
10000$ 0.4541

Availability 721
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 37
Multiples : 25
QtyUnit Price
37$ 1.8225
250$ 1.5375
500$ 1.525
1000$ 1.5125
3000$ 1.5125
5000$ 1.5


Availability 536
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 262
Multiples : 1
QtyUnit Price
262$ 0.9946
276$ 0.9426
284$ 0.9168


Availability 80
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 0
QtyUnit Price
1$ 2.31
5$ 2.17
9$ 2.128
25$ 2.002
100$ 1.974


Availability 2056
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7375
25$ 1.357
100$ 1.21


Availability 703
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 150
Multiples : 25
QtyUnit Price
150$ 2.0646
250$ 1.8089
500$ 1.7941


Availability 536
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 262
Multiples : 1
QtyUnit Price
262$ 0.9946
276$ 0.9426
284$ 0.9168


Availability 970
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4555
2000$ 0.4552
3000$ 0.455
4000$ 0.4547
5000$ 0.4544
10000$ 0.4541

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0620N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0620N3-G and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image TN2106N3-G
Transistor: N-MOSFET; unipolar; 60V; 0.6A; 740mW; TO92
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Stock Image TN2425N8-G
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Stock Image TN2435N8-G
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Stock : 687
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Stock : 21612
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image TN2501N8-G
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Stock : 1782
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image TN2106K1-G
Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3
Stock : 33000
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image TN2106N3-G
Transistor: N-MOSFET; unipolar; 60V; 0.6A; 740mW; TO92
Stock : 1422
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image TN2425N8-G
Transistor: N-MOSFET; unipolar; 250V; 1.5A; 1.6W; SOT89-3
Stock : 285
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image TN2435N8-G
Transistor: N-MOSFET; unipolar; 350V; 1A; 1.6W; SOT89-3
Stock : 5862
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (110pF typical) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced secondary breakdown. Complementary N- and P-channel devices Supertexs vertical DMOS FETs are ideally suited to a Applications wide range of switching and amplifying applications where Logic level interfaces - ideal for TTL and CMOS very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Solid state relays speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R I V Package Option DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) TO-92 () (A) (V) TN0620 TN0620N3-G 200 6.0 1.0 1.6 -G indicates package is RoHS compliant (Green) Pin Congurations Absolute Maximum Ratings DRAIN SOURCE Parameter Value Drain-to-source voltage BV DSS GATE Drain-to-gate voltage BV DGS TO-92 (N3) Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C Product Marking O Soldering temperature* 300 C T N Absolute Maximum Ratings are those values beyond which damage to the device YY = Year Sealed may occur. Functional operation under these conditions is not implied. Continuous 0 6 2 0 WW = Week Sealed operation of the device at the absolute rating level may affect device reliability. All Y Y W W = Green Packaging voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TO-92 (N3) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN0620 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 250 2.0 1.0 125 170 250 2.0 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 200 - - V V = 0V, I = 2.0mA DSS GS D V Gate threshold voltage 0.6 - 1.6 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA V = 0V, T = 125C GS A 0.5 - - V = 5.0V, V = 25V GS DS I On-state drain current A D(ON) 1.0 - - V = 10V, V = 25V GS DS - 6.0 8.0 V = 5.0V, I = 250mA GS D R Static drain-to-source on-state resistance DS(ON) - 4.0 6.0 V = 10V, I = 500mA GS D O R Change in R with temperature - - 1.4 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 300 400 - mmho V = 25V, I = 500mA FS DS D C Input capacitance - 110 150 ISS V = 0V, GS C Common source output capacitance - 40 85 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 10 35 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 8.0 r I = 1.0A, ns D t Turn-off delay time - - 20 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 1.0A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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