TN2130K1-G

TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from Secondary Breakdown The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure Low Power Drive Requirement and a well-proven silicon-gate manufacturing process. Ease of Paralleling This combination produces a device with the power Low C and Fast Switching Speeds ISS handling capabilities of bipolar transistors and the high Excellent Thermal Stability input impedance and positive temperature coefficient Integral Source-Drain Diode inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and High Input Impedance and High Gain thermally induced secondary breakdown. Applications Microchips vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications Logic-Level Interfaces (Ideal for TTL and CMOS) where very low threshold voltage, high breakdown Solid-State Relays voltage, high input impedance, low input capacitance, Battery-Operated Systems and fast switching speeds are desired. Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches Package Type 3-lead SOT-23 (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information. 2019-2020 Microchip Technology Inc. DS20005944B-page 1TN2130 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage ...................................................................................................................................... BV DSS Drain-to-Gate Voltage ......................................................................................................................................... BV DGS Gate-to-Source Voltage ......................................................................................................................................... 20V Operating Ambient Temperature, T ................................................................................................... 55C to +150C A Storage Temperature, T ..................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS COMMERCIAL Electrical Specifications: T = T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C A J unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 300 V V = 0V, I = 1 mA DSS GS D Gate Threshold Voltage V 0.8 2.4 V V = V , I = 1 mA GS(th) GS DS D V = V , I = 1 mA GS DS D Change in V with Temperature V 5.5 mV/C GS(th) GS(th) (Note 1) Gate Body Leakage Current I 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS 10 A V = Maximum rating DS Zero-Gate Voltage Drain Current I V = 0.8 Maximum rating, DSS DS 100 A V = 0V, T = 125C GS A (Note 1) On-State Drain Current I 250 mA V = 10V, V = 25V D(ON) GS DS Static Drain-to-Source On-State Resistance R 25 V = 4.5V, I = 120 mA DS(ON) GS D V = 4.5V, I = 120 mA GS D Change in R with Temperature R 1.1 %/C DS(ON) DS(ON) (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DC ELECTRICAL CHARACTERISTICS AUTOMOTIVE Electrical Specifications: T = T = (55C, 25C, and 150C) unless otherwise specified. All DC parameters are A J 100% tested at all three temperatures unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle.) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 300 V V = 0V, I = 1 mA DSS GS D 0.8 2.4 V V = V , I = 1 mA GS DS D Gate Threshold Voltage V V = V , I = 1 mA, GS(th) DS GS D 0.7 2.4 V T = 150C A V = V , I = 1 mA GS DS D Change in V with Temperature V 3.6 mV/C GS(th) GS(th) (Note 1) 100 nA V = 20V, V = 0V GS DS Gate Body Leakage Current I V = 20V, V = 0V, GSS GS DS 200 nA T = 150C A Note 1: Specification is obtained by characterization and is not 100% tested. DS20005944B-page 2 2019-2020 Microchip Technology Inc.