TN2640N3-G Microchip

TN2640N3-G electronic component of Microchip
TN2640N3-G Microchip
TN2640N3-G MOSFETs
TN2640N3-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TN2640N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN2640N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TN2640N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 740mW; TO92
Datasheet: TN2640N3-G Datasheet (PDF)
Price (USD)
48: USD 1.47 ea
Line Total: USD 70.56 
Availability : 12013
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
48$ 1.47
250$ 1.2163
500$ 1.1975
1000$ 1.1575
3000$ 1.105
5000$ 1.0888
8000$ 1.0725

Availability 12013
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 48
Multiples : 25
QtyUnit Price
48$ 1.47
250$ 1.2163
500$ 1.1975
1000$ 1.1575
3000$ 1.105
5000$ 1.0888
8000$ 1.0725


Availability 1147
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.05
25$ 1.562
100$ 1.419


Availability 67
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.52
3$ 2.464
8$ 2.394
10$ 2.268
25$ 2.17

   
Manufacturer
Product Category
RoHS - XON
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Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
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Gate-Source Breakdown Voltage
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Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN2640N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2640N3-G and other electronic components in the MOSFETs category and beyond.

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Product TN2640 Summary Sheet N-Channel Enhancement-Mode DMOS FET Applications: DC-DC converters 10V 90% VDD Solid state relays INPUT Pulse R L Ultrasound pulsers 10% Generator 0V OUTPUT t t Telecom switches (ON) (OFF) R GEN Photo voltaic drivers t t t t d(OFF) f d(ON) r Analog switches VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Switching Waveform and Test Circuit Product Overview: 3-Lead TO-252 (K4) TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET. Its D-Pak package gives designers the flexibility to use the device in a wide range of power switching and amplifying applications. It has a high breakdown voltage (400V), a low on- resistance (5.0W) and a low input capacitance (225pF) for fast switching applications. Adding these features into the D-Pak package increases the power dissipation capability to 2.5W in small footprints utilizing surface mount technology. Its low input and output leakage feature improves standby power dissipation while minimizing signal attenuation. 8-Lead SOIC (LG) Features: Benefits: Can be operated directly from logic level input signals. Low threshold 2.0V max. Eliminates the need for a level translator. Eliminates the need to supply DC current into the High input impedance gate. Low input capacitance Improves overall efficiency. Maximizes switching speed to help improve overall Fast switching speeds efficiency. 3-Lead TO-92 (N3) Low on resistance Improves overall efficiency Free from secondary breakdown Maximizes efficiency, minimizes power dissipation. compared to bipolar transistors Improves overall reliability. Improves measurement accuracy. Minimizes signal Low input and output leakage attenuation. Increases the power dissipation capability for surface Addition of D-Pak option mount technology to 2.5W. 120711TN2640 N-Channel Enhancement-Mode DMOS FET Ordering Information / Availability Part Number Package Option Samples Product Availability TN2640K4-G 3-Lead TO-252 (Green) Now 4-6 Weeks ARO TN2640LG-G 8-Lead SOIC (Green) Now 4-6 Weeks ARO TN2640N3-G 3-Lead TO-92 (Green) Now 4-6 Weeks ARO -G indicates the part is RoHS compliant (Green). Product Contact For any questions regarding the TN2640 please contact your local area Supertex sales office, or contact the main office in the US at: Telephone: 800-222-9883 Fax: 408-222-4895 E-mail: mktg supertex.com Web site: www.supertex.com 1235 Bordeaux Drive, Sunnyvale, CA 94089

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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