Product Information

VP2106N3-G

VP2106N3-G electronic component of Microchip

Datasheet
Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.4404 ea
Line Total: USD 22.02

5827 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
5827 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 50
Multiples : 50

Stock Image

VP2106N3-G
Microchip

50 : USD 0.4404
500 : USD 0.4054
1000 : USD 0.3994
3000 : USD 0.3851
5000 : USD 0.3757
8000 : USD 0.3701
15000 : USD 0.3646
25000 : USD 0.3591

12927 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

VP2106N3-G
Microchip

1 : USD 0.6291
25 : USD 0.5371
100 : USD 0.4956

42 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

VP2106N3-G
Microchip

1 : USD 1.209
5 : USD 0.9126
22 : USD 0.767
25 : USD 0.7553
58 : USD 0.728

4607 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 21
Multiples : 1

Stock Image

VP2106N3-G
Microchip

21 : USD 0.6059

5820 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 150
Multiples : 50

Stock Image

VP2106N3-G
Microchip

150 : USD 0.5256
500 : USD 0.5036
1000 : USD 0.4936

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the High input impedance and high gain high input impedance and positive temperature coefcient Excellent thermal stability inherent in MOS devices. Characteristic of all MOS Integral source-to-drain diode structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Ampliers input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package Option DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (mA) VP2106 VP2106N3-G -60 12 -500 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS S i V P Gate-to-source voltage 20V YY = Year Sealed O O 2 1 0 6 WW = Week Sealed Operating and storage temperature -55 C to +150 C Y Y W W O = Green Packaging Soldering temperature* 300 C Absolute Maximum Ratings are those values beyond which damage to the device Package may or may not include the following marks: Si or may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All TO-92 (N3) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVP2106 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 -250 -800 0.74 125 170 -250 -800 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -60 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -1.5 - -3.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 5.8 6.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A I On-state drain current -0.5 -1.0 - A V = -10V, V = -25V D(ON) GS DS - 11 15 V = -5.0V, I = -100mA GS D R Static drain-to-source on-state resistance DS(ON) - 9.0 12 V = -10V, I = -500mA GS D O R Change in R with temperature - 0.55 1.0 %/ C V = -10V, I = -500mA DS(ON) DS(ON) GS D G Forward transductance 150 200 - mmho V = -25V, I = -500mA FS DS D C Input capacitance - 45 60 ISS V = 0V, GS C Common source output capacitance - 22 30 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 8.0 RSS t Turn-on delay time - 4.0 5.0 d(ON) V = -25V, DD t Rise time - 5.0 8.0 r I = -500mA, ns D t Turn-off delay time - 5.0 9.0 d(OFF) R = 25 GEN t Fall time - 4.0 8.0 f V Diode forward voltage drop - -1.2 -2.0 V V = 0V, I = -500mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = -500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT -10V R 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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