VN2222LLG ON Semiconductor

VN2222LLG electronic component of ON Semiconductor
VN2222LLG ON Semiconductor
VN2222LLG MOSFETs
VN2222LLG  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of VN2222LLG MOSFETs across the USA, India, Europe, Australia, and various other global locations. VN2222LLG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.VN2222LLG
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:VN2222LLG
Low voltage, dual general-purpose inverting Schmitt trigger.
Datasheet:VN2222LLG Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1000: USD 0.1437 ea
Line Total: USD 143.7 
Availability : 0
  
QtyUnit Price
1000$ 0.1437
8000$ 0.1306
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1000
Multiples : 1
QtyUnit Price
1000$ 0.1437
8000$ 0.1306

   
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Product Category
RoHS - XON
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We are delighted to provide the VN2222LLG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VN2222LLG and other electronic components in the MOSFETs category and beyond.

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The ON Semiconductor VN2222LLG is a medium-power dual N-channel MOSFET transistor. This part contains two individually controlled N-channel enhancement-mode field-effect transistor cells, each of which has an inverse-biased integrated Schottky barrier diode and can be used for operating up to 1 A at high switching frequencies. This transistor can be used for fast switching applications in a variety of automotive and industrial electronics including power supplies, motor control and interface circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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