BC847B-TP Micro Commercial Components (MCC)

BC846A THRU BC84 9C Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Maximum Thermal Resistance:625/W Junction to Ambient SOT-23 Parameter Symbol Rating Unit A D V Collector-Base Voltage V CBO BC846A-BC846C 80 BC847A-BC847C B 50 C 30 BC848A-BC848C,BC849B-BC849C V Collector-Emitter Voltage V CEO F E BC846A-BC846C 65 BC847A-BC847C 45 30 BC848A-BC848C,BC849B-BC849C G H J V 6 Emitter-Base Voltage V L EBO K Collector Current I 100 mA C ( Note2) DIMENSIONS P 225 mW Collector Power Dissipation T =25 C A INCHES MM DIM NOTE Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, MIN MAX MIN MAX <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. A 0.110 0.120 2.80 3.04 2. Transistor mounted on an FR4 printed-circuit board B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 Internal Structure H 0.035 0.043 0.90 1.10 C J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 Marking: L 0.007 0.020 0.20 0.50 BC846A:1A BC846B:1B BC846C:1C B E BC847A:1E BC847B:1F BC847C:1G Suggested Solder Pad Layout BC848A:1J BC848B:1K BC848C:1L 0.031 BC849B:49B BC849C:49C 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-8-10112021 1/4 MCCSEMI.COMBC846A THRU BC84 9C Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage BC846A-BC846C 80 V I =10A, I =0 V (BR)CBO C E BC847A-BC847C 50 BC848A-BC848C,BC849B-BC849C 30 Collector-Emitter Breakdown Voltage BC846A-BC846C 65 V I =10mA, I =0 V (BR)CEO C B BC847A-BC847C 45 BC848A-BC848C,BC849B-BC849C 30 Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C Collector Cut-off Current BC846A-BC846C V =70V, I =0 CB E I 0.1 A CBO BC847A-BC847C V =50V, I =0 CB E BC848A-BC848C,BC849B-BC849C V =30V, I =0 CB E Emitter Cutoff Current BC846A-BC846C V =60V, I =0 CE B I 0.1 A CEO BC847A-BC847C V =45V, I =0 CE B BC848A-BC848C,BC849B-BC849C V =30V, I =0 CE B Emitter Cutoff Current I 0.1 A V =5V, I =0 EBO EB C DC Current Gain BC846A/BC847A/BC848A 90 h V =5V, I =10A FE(1) CE C BC846B/BC847B/BC848B/BC849B 150 BC846C/BC847C/BC848C/BC849C 400 DC Current Gain BC846A/BC847A/BC848A 110 220 h V =5V, I =2mA FE(2) CE C BC846B/BC847B/BC848B/BC849B 200 450 BC846C/BC847C/BC848C/BC849C 420 800 I =10mA, I =0.5mA 0.25 V C B V Collector-Emitter Saturation Voltage CE(sat) I =100mA, I =5mA 0.5 V C B I =10mA, I =0.5mA 0.7 V C B V Base-Emitter Saturation Voltage BE(sat) I =100mA, I =5mA 0.9 1.1 V C B V =5V, I =2mA 0.58 0.66 0.7 V CE C V Base-Emitter On Voltage BE(on) V =5V, I =10mA 0.77 V CE C f V =5V, I =10mA, f=100MHz Transition Frequency 100 MHz T CE C C V =10V, I =0, f=0.1MHz Collector Output Capacitance 4.5 pF ob CB E I =0.2mA, V =5.0V, R =2.0k, C CE S NF Noise Figure 10 dB f=1.0kHz, BW=200Hz Rev.3-8-10112021 2/4 MCCSEMI.COM